Electrical and thermal transport of layered bismuth-sulfide EuBiS<inf>2</inf>F at temperatures between 300 and 623 K

Yosuke Goto, Joe Kajitani, Yoshikazu Mizuguchi, Yoichi Kamihara, Masanori Matoba

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We demonstrate the electrical and thermal transport of the layered bismuth-based sulfide EuBiS<inf>2</inf>F from 300 to 623 K. Although significant hybridization between Eu 4f and Bi 6p electrons was reported previously, the carrier transport of the compound is similar to that of F-doped LaBiS<inf>2</inf>O, at least above 300 K. The lattice thermal conductivity is lower than that of isostructural SrBiS<inf>2</inf>F, which is attributed to the heavier atomic mass of Eu ions than that of Sr ions.

Original languageEnglish
Article number085003
JournalJournal of the Physical Society of Japan
Volume84
Issue number8
DOIs
Publication statusPublished - 2015 Aug 15

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bismuth sulfides
atomic weights
bismuth
sulfides
ions
thermal conductivity
temperature
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electrical and thermal transport of layered bismuth-sulfide EuBiS<inf>2</inf>F at temperatures between 300 and 623 K. / Goto, Yosuke; Kajitani, Joe; Mizuguchi, Yoshikazu; Kamihara, Yoichi; Matoba, Masanori.

In: Journal of the Physical Society of Japan, Vol. 84, No. 8, 085003, 15.08.2015.

Research output: Contribution to journalArticle

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