Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

H. Morishita, L. S. Vlasenko, H. Tanaka, K. Semba, K. Sawano, Y. Shiraki, Mikio Eto, Kohei M Itoh

Research output: Contribution to journalArticle

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Abstract

Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term rather than by the Zeeman terms at such low magnetic fields, superposition states α | ↑↓ 〉 +β | ↓↑ 〉 and -β | ↑↓ 〉 +α | ↓↑ 〉 were formed between phosphorus electron and nuclear spins, and electron paramagnetic resonance transitions between these superposition states and | ↑↑ 〉 or | ↓↓ 〉 states are observed clearly. A continuous change of α and β with the magnetic field was observed with a behavior fully consistent with theory of phosphorus donors in silicon.

Original languageEnglish
Article number205206
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number20
DOIs
Publication statusPublished - 2009 Nov 24

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Silicon
Phosphorus
phosphorus
Magnetic fields
Paramagnetic resonance
electron paramagnetic resonance
silicon
magnetic fields
Hamiltonians
nuclear spin
electron spin
Electrons

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon. / Morishita, H.; Vlasenko, L. S.; Tanaka, H.; Semba, K.; Sawano, K.; Shiraki, Y.; Eto, Mikio; Itoh, Kohei M.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 80, No. 20, 205206, 24.11.2009.

Research output: Contribution to journalArticle

Morishita, H. ; Vlasenko, L. S. ; Tanaka, H. ; Semba, K. ; Sawano, K. ; Shiraki, Y. ; Eto, Mikio ; Itoh, Kohei M. / Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon. In: Physical Review B - Condensed Matter and Materials Physics. 2009 ; Vol. 80, No. 20.
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