Electrical detection of cross relaxation between electron spins of phosphorus and oxygen-vacancy centers in silicon

W. Akhtar, H. Morishita, K. Sawano, Y. Shiraki, L. S. Vlasenko, Kohei M Itoh

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report on the electrical detection of cross relaxation (EDCR) processes in phosphorus-doped γ-irradiated silicon, where the dipolar-coupled electron spins of phosphorus and oxygen-vacancy complex (Si-SL1 center) undergo spin flip-flop transitions at specific magnetic field values for which the Zeeman splitting of the two centers become equal. Such cross relaxation signals are observed as the change in the sample photoconductivity at theoretically predicted magnetic fields without application of resonance frequency. This EDCR is a very simple and sensitive method for detecting paramagnetic centers in semiconductors.

Original languageEnglish
Article number045204
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number4
DOIs
Publication statusPublished - 2011 Jul 8

Fingerprint

cross relaxation
Silicon
Oxygen vacancies
electron spin
Phosphorus
phosphorus
Magnetic fields
Electrons
Flip flop circuits
Photoconductivity
Relaxation processes
silicon
oxygen
flip-flops
Semiconductor materials
magnetic fields
photoconductivity

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Electrical detection of cross relaxation between electron spins of phosphorus and oxygen-vacancy centers in silicon. / Akhtar, W.; Morishita, H.; Sawano, K.; Shiraki, Y.; Vlasenko, L. S.; Itoh, Kohei M.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 84, No. 4, 045204, 08.07.2011.

Research output: Contribution to journalArticle

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