Electrical detection of cross relaxation between electron spins of phosphorus and oxygen-vacancy centers in silicon

W. Akhtar, H. Morishita, K. Sawano, Y. Shiraki, L. S. Vlasenko, K. M. Itoh

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We report on the electrical detection of cross relaxation (EDCR) processes in phosphorus-doped γ-irradiated silicon, where the dipolar-coupled electron spins of phosphorus and oxygen-vacancy complex (Si-SL1 center) undergo spin flip-flop transitions at specific magnetic field values for which the Zeeman splitting of the two centers become equal. Such cross relaxation signals are observed as the change in the sample photoconductivity at theoretically predicted magnetic fields without application of resonance frequency. This EDCR is a very simple and sensitive method for detecting paramagnetic centers in semiconductors.

Original languageEnglish
Article number045204
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number4
Publication statusPublished - 2011 Jul 8


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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