ELECTRICAL PERFORMANCES OF GaAs PERMEABLE BASE BALLISTIC ELECTRON TRANSISTORS.

Y. Awano, K. Tomizawa, N. Hashizume

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Electrical performances of GaAs Permeable Base Transistors (PBTs) having a quarter micron emitter-collector distance is studied by two-dimensional Monte Carlo particle simulation. Dependence on the base thickness, base spacing, and doping density of the electrical performances is discussed.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
EditorsB. de Cremoux
Pages623-628
Number of pages6
Edition74
Publication statusPublished - 1985 Dec 1
Externally publishedYes

Publication series

NameInstitute of Physics Conference Series
Number74
ISSN (Print)0373-0751

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Awano, Y., Tomizawa, K., & Hashizume, N. (1985). ELECTRICAL PERFORMANCES OF GaAs PERMEABLE BASE BALLISTIC ELECTRON TRANSISTORS. In B. de Cremoux (Ed.), Institute of Physics Conference Series (74 ed., pp. 623-628). (Institute of Physics Conference Series; No. 74).