Electrical performances of GaAs Permeable Base Transistors (PBTs) having a quarter micron emitter-collector distance is studied by two-dimensional Monte Carlo particle simulation. Dependence on the base thickness, base spacing, and doping density of the electrical performances is discussed.
|Title of host publication||Institute of Physics Conference Series|
|Editors||B. de Cremoux|
|Number of pages||6|
|Publication status||Published - 1985 Dec 1|
|Name||Institute of Physics Conference Series|
ASJC Scopus subject areas
- Physics and Astronomy(all)