Electrical properties of carbon nanotube bundles for future via interconnects

Mizuhisa Nihei, Akio Kawabata, Daiyu Kondo, Masahiro Horibe, Shintaro Sato, Yuji Awano

Research output: Contribution to journalArticle

154 Citations (Scopus)

Abstract

We have developed carbon nanotube (CNT) vias consisting of about 1000 tubes using thermal chemical vapor deposition (CVD) at a growth temperature of 450°C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The lowest resistance obtained was about 5 Ω/via. The total resistance of the CNT via was three orders of magnitude lower than that of one CNT, indicating that the current flows in parallel through about 1000 tubes. No degradation was observed for 100 hours at via current densities of 2 × 106 A/cm2, which is favorably compared with Cu vias.

Original languageEnglish
Pages (from-to)1626-1628
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 A
DOIs
Publication statusPublished - 2005 Apr
Externally publishedYes

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Keywords

  • Carbon nanotube
  • Chemical vapor deposition
  • Interconnect
  • Resistance
  • Via

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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