Electrical properties of carbon nanotube bundles for future via interconnects

Mizuhisa Nihei; Akio Kawabata; Daiyu Kondo; Masahiro Horibe; Shintaro Sato; Yuji Awano

doi:10.1143/JJAP.44.1626

Electrical properties of carbon nanotube bundles for future via interconnects

Mizuhisa Nihei, Akio Kawabata, Daiyu Kondo, Masahiro Horibe, Shintaro Sato, Yuji Awano

Research output: Contribution to journal › Article › peer-review

145 Citations (Scopus)

Abstract

We have developed carbon nanotube (CNT) vias consisting of about 1000 tubes using thermal chemical vapor deposition (CVD) at a growth temperature of 450°C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The lowest resistance obtained was about 5 Ω/via. The total resistance of the CNT via was three orders of magnitude lower than that of one CNT, indicating that the current flows in parallel through about 1000 tubes. No degradation was observed for 100 hours at via current densities of 2 × 106 A/cm², which is favorably compared with Cu vias.

Original language	English
Pages (from-to)	1626-1628
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.44.1626
Publication status	Published - 2005 Apr
Externally published	Yes

Keywords

Carbon nanotube
Chemical vapor deposition
Interconnect
Resistance
Via

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.44.1626

Cite this

@article{baa99f083315406485db0468de243d95,

title = "Electrical properties of carbon nanotube bundles for future via interconnects",

abstract = "We have developed carbon nanotube (CNT) vias consisting of about 1000 tubes using thermal chemical vapor deposition (CVD) at a growth temperature of 450°C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The lowest resistance obtained was about 5 Ω/via. The total resistance of the CNT via was three orders of magnitude lower than that of one CNT, indicating that the current flows in parallel through about 1000 tubes. No degradation was observed for 100 hours at via current densities of 2 × 106 A/cm2, which is favorably compared with Cu vias.",

keywords = "Carbon nanotube, Chemical vapor deposition, Interconnect, Resistance, Via",

author = "Mizuhisa Nihei and Akio Kawabata and Daiyu Kondo and Masahiro Horibe and Shintaro Sato and Yuji Awano",

year = "2005",

month = apr,

doi = "10.1143/JJAP.44.1626",

language = "English",

volume = "44",

pages = "1626--1628",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 A",

}

TY - JOUR

T1 - Electrical properties of carbon nanotube bundles for future via interconnects

AU - Nihei, Mizuhisa

AU - Kawabata, Akio

AU - Kondo, Daiyu

AU - Horibe, Masahiro

AU - Sato, Shintaro

AU - Awano, Yuji

PY - 2005/4

Y1 - 2005/4

N2 - We have developed carbon nanotube (CNT) vias consisting of about 1000 tubes using thermal chemical vapor deposition (CVD) at a growth temperature of 450°C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The lowest resistance obtained was about 5 Ω/via. The total resistance of the CNT via was three orders of magnitude lower than that of one CNT, indicating that the current flows in parallel through about 1000 tubes. No degradation was observed for 100 hours at via current densities of 2 × 106 A/cm2, which is favorably compared with Cu vias.

AB - We have developed carbon nanotube (CNT) vias consisting of about 1000 tubes using thermal chemical vapor deposition (CVD) at a growth temperature of 450°C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The lowest resistance obtained was about 5 Ω/via. The total resistance of the CNT via was three orders of magnitude lower than that of one CNT, indicating that the current flows in parallel through about 1000 tubes. No degradation was observed for 100 hours at via current densities of 2 × 106 A/cm2, which is favorably compared with Cu vias.

KW - Carbon nanotube

KW - Chemical vapor deposition

KW - Interconnect

KW - Resistance

KW - Via

UR - http://www.scopus.com/inward/record.url?scp=21244470717&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21244470717&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.1626

DO - 10.1143/JJAP.44.1626

M3 - Article

AN - SCOPUS:21244470717

SN - 0021-4922

VL - 44

SP - 1626

EP - 1628

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 4 A

ER -

Electrical properties of carbon nanotube bundles for future via interconnects

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this