Electrical properties of carbon nanotube via interconnects fabricated by novel damascene process

Mizuhisa Nihei, Takashi Hyakushima, Shintaro Sato, Tatsuhiro Nozue, Masaaki Norimatsu, Miho Mishima, Tomo Murakami, Daiyu Kondo, Akio Kawabata, Mari Ohfuti, Yuji Awano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

36 Citations (Scopus)

Abstract

We studied the electrical properties of a carbon nanotube (CNT) via interconnect fabricated by a novel damascene process which is mostly compatible with conventional Cu interconnects. It was found that the resistance of 60-nm-height vias was independent of temperatures as high as 423K, which suggests that the carrier transport is ballistic. The obtained resistance of 0.05 Ω for 2.8-um-diameter vias is the lowest value ever reported. From the via height dependence of the resistance, the electron mean free path was estimated to be about 80 nm, which is similar to the via height predicted for 32-nm technology node (year 2013). This indicates that it will be possible to realize CNT vias with ballistic transport for 32-nm technology node and below.

Original languageEnglish
Title of host publicationProceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers
Pages204-206
Number of pages3
Publication statusPublished - 2007
Externally publishedYes
EventIEEE 2007 International Interconnect Technology Conference, IITC - Burlingame, CA, United States
Duration: 2007 Jun 42007 Jun 6

Other

OtherIEEE 2007 International Interconnect Technology Conference, IITC
CountryUnited States
CityBurlingame, CA
Period07/6/407/6/6

Fingerprint

Carbon Nanotubes
Ballistics
Carbon nanotubes
Electric properties
carbon nanotubes
electrical properties
ballistics
Carrier transport
mean free path
Electrons
Temperature
electrons
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Nihei, M., Hyakushima, T., Sato, S., Nozue, T., Norimatsu, M., Mishima, M., ... Awano, Y. (2007). Electrical properties of carbon nanotube via interconnects fabricated by novel damascene process. In Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers (pp. 204-206). [4263702]

Electrical properties of carbon nanotube via interconnects fabricated by novel damascene process. / Nihei, Mizuhisa; Hyakushima, Takashi; Sato, Shintaro; Nozue, Tatsuhiro; Norimatsu, Masaaki; Mishima, Miho; Murakami, Tomo; Kondo, Daiyu; Kawabata, Akio; Ohfuti, Mari; Awano, Yuji.

Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers. 2007. p. 204-206 4263702.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nihei, M, Hyakushima, T, Sato, S, Nozue, T, Norimatsu, M, Mishima, M, Murakami, T, Kondo, D, Kawabata, A, Ohfuti, M & Awano, Y 2007, Electrical properties of carbon nanotube via interconnects fabricated by novel damascene process. in Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers., 4263702, pp. 204-206, IEEE 2007 International Interconnect Technology Conference, IITC, Burlingame, CA, United States, 07/6/4.
Nihei M, Hyakushima T, Sato S, Nozue T, Norimatsu M, Mishima M et al. Electrical properties of carbon nanotube via interconnects fabricated by novel damascene process. In Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers. 2007. p. 204-206. 4263702
Nihei, Mizuhisa ; Hyakushima, Takashi ; Sato, Shintaro ; Nozue, Tatsuhiro ; Norimatsu, Masaaki ; Mishima, Miho ; Murakami, Tomo ; Kondo, Daiyu ; Kawabata, Akio ; Ohfuti, Mari ; Awano, Yuji. / Electrical properties of carbon nanotube via interconnects fabricated by novel damascene process. Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers. 2007. pp. 204-206
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