Electrical properties of photoconductor using Ga2O 3/CuGaSe2 heterojunction

Kenji Kikuchi, Shigeyuki Imura, Kazunori Miyakawa, Misao Kubota, Eiji Ohta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The feasibility of using a photoconductor with a Ga2O 3/CuGaSe2 heterojunction for visible light sensors was investigated. CIGS chalcopyrite semiconductors have both a high absorption coefficient and high quantum efficiency. However, their dark current is too high for image sensors. In this study, we applied gallium oxide (Ga 2O3) as a hole-blocking layer for CIGS thin film to reduce the dark current. Experimental results showed that the dark current was drastically reduced, and an avalanche multiplication phenomenon was observed at an applied voltage of over 6 V. However, this structure had sensitivity only in the ultraviolet light region because its depletion region was almost completely spread in the Ga2O3 layer since the carrier density of the Ga2O3 layer was much lower than that of the CIGS layer. These results indicate that the Ga2O3/CuGaSe2 heterojunction has potential for use in visible light sensors but that we also need to increase the carrier density of the Ga2O3 layer to shift the depletion region to the CIGS film.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages391-395
Number of pages5
Volume1538
DOIs
Publication statusPublished - 2013
Event2013 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2013 Apr 12013 Apr 5

Other

Other2013 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period13/4/113/4/5

Fingerprint

Photoconducting materials
photoconductors
Dark currents
Heterojunctions
heterojunctions
Electric properties
electrical properties
dark current
Carrier concentration
Sensors
Gallium
sensors
Quantum efficiency
depletion
Image sensors
gallium oxides
Semiconductor materials
Thin films
Oxides
multiplication

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Kikuchi, K., Imura, S., Miyakawa, K., Kubota, M., & Ohta, E. (2013). Electrical properties of photoconductor using Ga2O 3/CuGaSe2 heterojunction. In Materials Research Society Symposium Proceedings (Vol. 1538, pp. 391-395) https://doi.org/10.1557/opl.2013.1013

Electrical properties of photoconductor using Ga2O 3/CuGaSe2 heterojunction. / Kikuchi, Kenji; Imura, Shigeyuki; Miyakawa, Kazunori; Kubota, Misao; Ohta, Eiji.

Materials Research Society Symposium Proceedings. Vol. 1538 2013. p. 391-395.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kikuchi, K, Imura, S, Miyakawa, K, Kubota, M & Ohta, E 2013, Electrical properties of photoconductor using Ga2O 3/CuGaSe2 heterojunction. in Materials Research Society Symposium Proceedings. vol. 1538, pp. 391-395, 2013 MRS Spring Meeting, San Francisco, CA, United States, 13/4/1. https://doi.org/10.1557/opl.2013.1013
Kikuchi K, Imura S, Miyakawa K, Kubota M, Ohta E. Electrical properties of photoconductor using Ga2O 3/CuGaSe2 heterojunction. In Materials Research Society Symposium Proceedings. Vol. 1538. 2013. p. 391-395 https://doi.org/10.1557/opl.2013.1013
Kikuchi, Kenji ; Imura, Shigeyuki ; Miyakawa, Kazunori ; Kubota, Misao ; Ohta, Eiji. / Electrical properties of photoconductor using Ga2O 3/CuGaSe2 heterojunction. Materials Research Society Symposium Proceedings. Vol. 1538 2013. pp. 391-395
@inproceedings{1a241bf8489d4eba8c182c73692a58fb,
title = "Electrical properties of photoconductor using Ga2O 3/CuGaSe2 heterojunction",
abstract = "The feasibility of using a photoconductor with a Ga2O 3/CuGaSe2 heterojunction for visible light sensors was investigated. CIGS chalcopyrite semiconductors have both a high absorption coefficient and high quantum efficiency. However, their dark current is too high for image sensors. In this study, we applied gallium oxide (Ga 2O3) as a hole-blocking layer for CIGS thin film to reduce the dark current. Experimental results showed that the dark current was drastically reduced, and an avalanche multiplication phenomenon was observed at an applied voltage of over 6 V. However, this structure had sensitivity only in the ultraviolet light region because its depletion region was almost completely spread in the Ga2O3 layer since the carrier density of the Ga2O3 layer was much lower than that of the CIGS layer. These results indicate that the Ga2O3/CuGaSe2 heterojunction has potential for use in visible light sensors but that we also need to increase the carrier density of the Ga2O3 layer to shift the depletion region to the CIGS film.",
author = "Kenji Kikuchi and Shigeyuki Imura and Kazunori Miyakawa and Misao Kubota and Eiji Ohta",
year = "2013",
doi = "10.1557/opl.2013.1013",
language = "English",
isbn = "9781605115153",
volume = "1538",
pages = "391--395",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Electrical properties of photoconductor using Ga2O 3/CuGaSe2 heterojunction

AU - Kikuchi, Kenji

AU - Imura, Shigeyuki

AU - Miyakawa, Kazunori

AU - Kubota, Misao

AU - Ohta, Eiji

PY - 2013

Y1 - 2013

N2 - The feasibility of using a photoconductor with a Ga2O 3/CuGaSe2 heterojunction for visible light sensors was investigated. CIGS chalcopyrite semiconductors have both a high absorption coefficient and high quantum efficiency. However, their dark current is too high for image sensors. In this study, we applied gallium oxide (Ga 2O3) as a hole-blocking layer for CIGS thin film to reduce the dark current. Experimental results showed that the dark current was drastically reduced, and an avalanche multiplication phenomenon was observed at an applied voltage of over 6 V. However, this structure had sensitivity only in the ultraviolet light region because its depletion region was almost completely spread in the Ga2O3 layer since the carrier density of the Ga2O3 layer was much lower than that of the CIGS layer. These results indicate that the Ga2O3/CuGaSe2 heterojunction has potential for use in visible light sensors but that we also need to increase the carrier density of the Ga2O3 layer to shift the depletion region to the CIGS film.

AB - The feasibility of using a photoconductor with a Ga2O 3/CuGaSe2 heterojunction for visible light sensors was investigated. CIGS chalcopyrite semiconductors have both a high absorption coefficient and high quantum efficiency. However, their dark current is too high for image sensors. In this study, we applied gallium oxide (Ga 2O3) as a hole-blocking layer for CIGS thin film to reduce the dark current. Experimental results showed that the dark current was drastically reduced, and an avalanche multiplication phenomenon was observed at an applied voltage of over 6 V. However, this structure had sensitivity only in the ultraviolet light region because its depletion region was almost completely spread in the Ga2O3 layer since the carrier density of the Ga2O3 layer was much lower than that of the CIGS layer. These results indicate that the Ga2O3/CuGaSe2 heterojunction has potential for use in visible light sensors but that we also need to increase the carrier density of the Ga2O3 layer to shift the depletion region to the CIGS film.

UR - http://www.scopus.com/inward/record.url?scp=84889665641&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84889665641&partnerID=8YFLogxK

U2 - 10.1557/opl.2013.1013

DO - 10.1557/opl.2013.1013

M3 - Conference contribution

AN - SCOPUS:84889665641

SN - 9781605115153

VL - 1538

SP - 391

EP - 395

BT - Materials Research Society Symposium Proceedings

ER -