ELECTRICAL PROPERTIES OF SELENIUM-DIFFUSED SILICON.

Cheol Seong Kim, Eiji Ohta, Makoto Sakata

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The energy levels of selenium in silicon have been measured by fitting the theoretical carrier concentration versus temperature equation for semiconductors containing both double donors and acceptors to the experimental curve obtained from the Hall coefficient. The resistivity and Hall coefficient were measured by the van der Pauw method for samples diffused at 1100-1200 degree C for 68-168 hours. Selenium in silicon is a double donor impurity with energy levels of 0. 26 and 0. 50 eV below the conduction band edge. The ratios of the state degeneracies of neutral and singly ionized selenium centers, gamma //1, and of singly and doubly ionized selenium centers, gamma //2, are found to be one-half and 2 respectively. Selenium in silicon may be thought of as the analogue of a helium-like center in silicon.

Original languageEnglish
Pages (from-to)909-915
Number of pages7
JournalJapanese Journal of Applied Physics
Volume18
Issue number5
Publication statusPublished - 1979 May

Fingerprint

Selenium
selenium
Electric properties
electrical properties
Silicon
silicon
Electron energy levels
Hall effect
energy levels
Conduction bands
Carrier concentration
Helium
conduction bands
helium
Impurities
analogs
Semiconductor materials
impurities
electrical resistivity
curves

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, C. S., Ohta, E., & Sakata, M. (1979). ELECTRICAL PROPERTIES OF SELENIUM-DIFFUSED SILICON. Japanese Journal of Applied Physics, 18(5), 909-915.

ELECTRICAL PROPERTIES OF SELENIUM-DIFFUSED SILICON. / Kim, Cheol Seong; Ohta, Eiji; Sakata, Makoto.

In: Japanese Journal of Applied Physics, Vol. 18, No. 5, 05.1979, p. 909-915.

Research output: Contribution to journalArticle

Kim, CS, Ohta, E & Sakata, M 1979, 'ELECTRICAL PROPERTIES OF SELENIUM-DIFFUSED SILICON.', Japanese Journal of Applied Physics, vol. 18, no. 5, pp. 909-915.
Kim, Cheol Seong ; Ohta, Eiji ; Sakata, Makoto. / ELECTRICAL PROPERTIES OF SELENIUM-DIFFUSED SILICON. In: Japanese Journal of Applied Physics. 1979 ; Vol. 18, No. 5. pp. 909-915.
@article{b288908c14e24369b78b43f690787625,
title = "ELECTRICAL PROPERTIES OF SELENIUM-DIFFUSED SILICON.",
abstract = "The energy levels of selenium in silicon have been measured by fitting the theoretical carrier concentration versus temperature equation for semiconductors containing both double donors and acceptors to the experimental curve obtained from the Hall coefficient. The resistivity and Hall coefficient were measured by the van der Pauw method for samples diffused at 1100-1200 degree C for 68-168 hours. Selenium in silicon is a double donor impurity with energy levels of 0. 26 and 0. 50 eV below the conduction band edge. The ratios of the state degeneracies of neutral and singly ionized selenium centers, gamma //1, and of singly and doubly ionized selenium centers, gamma //2, are found to be one-half and 2 respectively. Selenium in silicon may be thought of as the analogue of a helium-like center in silicon.",
author = "Kim, {Cheol Seong} and Eiji Ohta and Makoto Sakata",
year = "1979",
month = "5",
language = "English",
volume = "18",
pages = "909--915",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "5",

}

TY - JOUR

T1 - ELECTRICAL PROPERTIES OF SELENIUM-DIFFUSED SILICON.

AU - Kim, Cheol Seong

AU - Ohta, Eiji

AU - Sakata, Makoto

PY - 1979/5

Y1 - 1979/5

N2 - The energy levels of selenium in silicon have been measured by fitting the theoretical carrier concentration versus temperature equation for semiconductors containing both double donors and acceptors to the experimental curve obtained from the Hall coefficient. The resistivity and Hall coefficient were measured by the van der Pauw method for samples diffused at 1100-1200 degree C for 68-168 hours. Selenium in silicon is a double donor impurity with energy levels of 0. 26 and 0. 50 eV below the conduction band edge. The ratios of the state degeneracies of neutral and singly ionized selenium centers, gamma //1, and of singly and doubly ionized selenium centers, gamma //2, are found to be one-half and 2 respectively. Selenium in silicon may be thought of as the analogue of a helium-like center in silicon.

AB - The energy levels of selenium in silicon have been measured by fitting the theoretical carrier concentration versus temperature equation for semiconductors containing both double donors and acceptors to the experimental curve obtained from the Hall coefficient. The resistivity and Hall coefficient were measured by the van der Pauw method for samples diffused at 1100-1200 degree C for 68-168 hours. Selenium in silicon is a double donor impurity with energy levels of 0. 26 and 0. 50 eV below the conduction band edge. The ratios of the state degeneracies of neutral and singly ionized selenium centers, gamma //1, and of singly and doubly ionized selenium centers, gamma //2, are found to be one-half and 2 respectively. Selenium in silicon may be thought of as the analogue of a helium-like center in silicon.

UR - http://www.scopus.com/inward/record.url?scp=0018469595&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0018469595&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0018469595

VL - 18

SP - 909

EP - 915

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5

ER -