Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy

P. Fons, N. Hirashita, L. C. Markert, Y. W. Kim, J. E. Greene, W. X. Ni, J. Knall, G. V. Hansson, J. E. Sundgren

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

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Physics & Astronomy