Electrical resistivity and Hall resistivity of thin films of amorphous Cr1-xMnxGe

Tetsuya Sato, K. Ikkatai, E. Ohta, M. Sakata

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The electrical resistivity rho and the Hall resistivity rho H of thin films of amorphous Cr1-xMnxGe(0<or=x<or=0.9) prepared by the flash-evaporation method are measured in the temperature ranges 4.2-320 and 77-270K, respectively. The temperature coefficient of the electrical resistivity is negative at temperatures between 4.2 and 320K for x>or=0.2 although minima and maxima in the electrical resistivity are observed for x=0 and 0.1. The low-temperature data on the relative electrical resistivity rho R(t) for x>or=0.3 satisfy the relation rho R(T)=A+B exp(-CT). The coefficient C shows a minimum at x approximately=0.5. The Hall resistivity increases monotonically with increasing Mn content. A possible explanation for the magnetic properties of amorphous Cr1-xMn xGe alloys is given on the basis of these transport measurements.

Original languageEnglish
Article number015
Pages (from-to)2087-2095
Number of pages9
JournalJournal of Physics F: Metal Physics
Volume14
Issue number9
DOIs
Publication statusPublished - 1984

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Thin films
electrical resistivity
thin films
Magnetic properties
Temperature
magnetic properties
coefficients

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Metals and Alloys

Cite this

Electrical resistivity and Hall resistivity of thin films of amorphous Cr1-xMnxGe. / Sato, Tetsuya; Ikkatai, K.; Ohta, E.; Sakata, M.

In: Journal of Physics F: Metal Physics, Vol. 14, No. 9, 015, 1984, p. 2087-2095.

Research output: Contribution to journalArticle

Sato, Tetsuya ; Ikkatai, K. ; Ohta, E. ; Sakata, M. / Electrical resistivity and Hall resistivity of thin films of amorphous Cr1-xMnxGe. In: Journal of Physics F: Metal Physics. 1984 ; Vol. 14, No. 9. pp. 2087-2095.
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