TY - JOUR
T1 - Electrical resistivity in thin film of reentrant spin glass NiMn
AU - Sato, T.
AU - Yoneyama, N.
AU - Torii, Y.
AU - Ando, T.
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 1990
Y1 - 1990
N2 - Electrical resistivity in thin films of disordered NiMn shows a minimum at Tmin which correlates with the spin glass transition temperature Tg. The signs of the film thickness dependence of Tmin are opposite for two Mn concentrations which are larger and smaller than the multicritical-point concentration (23.9 at% Mn).
AB - Electrical resistivity in thin films of disordered NiMn shows a minimum at Tmin which correlates with the spin glass transition temperature Tg. The signs of the film thickness dependence of Tmin are opposite for two Mn concentrations which are larger and smaller than the multicritical-point concentration (23.9 at% Mn).
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U2 - 10.1016/S0304-8853(10)80127-1
DO - 10.1016/S0304-8853(10)80127-1
M3 - Article
AN - SCOPUS:0025626771
VL - 90-91
SP - 349
EP - 350
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
ER -