Electrical resistivity in thin film of reentrant spin glass NiMn

T. Sato, N. Yoneyama, Y. Torii, T. Ando

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Electrical resistivity in thin films of disordered NiMn shows a minimum at Tmin which correlates with the spin glass transition temperature Tg. The signs of the film thickness dependence of Tmin are opposite for two Mn concentrations which are larger and smaller than the multicritical-point concentration (23.9 at% Mn).

Original languageEnglish
Pages (from-to)349-350
Number of pages2
JournalJournal of Magnetism and Magnetic Materials
Volume90-91
DOIs
Publication statusPublished - 1990 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Electrical resistivity in thin film of reentrant spin glass NiMn'. Together they form a unique fingerprint.

  • Cite this