Electrical resistivity in thin film of reentrant spin glass NiMn

Tetsuya Sato, N. Yoneyama, Y. Torri, T. Ando

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Abstract

Electrical resistivity in thin films of disordered NiMn shows a minimum at Tmin which correlates with the spin glass transition temperature Tg. The signs of the film thickness dependence of Tmin are opposite for two Mn concentrations which are larger and smaller than the multicritical-point concentration (23.9 at % Mn). The samples were produced through coevaporation of Ni and Mn with E-gun evaporation technique in an ultra-high vacuum chamber (< 5 × 10-8 Torr), and their deposition rates were independently determined with two quartz-crystal film thickness monitors.

Original languageEnglish
Pages (from-to)349-350
Number of pages2
JournalJournal of Magnetism and Magnetic Materials
Volume90 pt 91
Publication statusPublished - 1990

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ASJC Scopus subject areas

  • Condensed Matter Physics

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