Electrical resistivity in thin film of reentrant spin glass NiMn

T. Sato; N. Yoneyama; Y. Torii; T. Ando

doi:10.1016/S0304-8853(10)80127-1

Electrical resistivity in thin film of reentrant spin glass NiMn

T. Sato, N. Yoneyama, Y. Torii, T. Ando

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Electrical resistivity in thin films of disordered NiMn shows a minimum at T_min which correlates with the spin glass transition temperature T_g. The signs of the film thickness dependence of T_min are opposite for two Mn concentrations which are larger and smaller than the multicritical-point concentration (23.9 at% Mn).

Original language	English
Pages (from-to)	349-350
Number of pages	2
Journal	Journal of Magnetism and Magnetic Materials
Volume	90-91
DOIs	https://doi.org/10.1016/S0304-8853(10)80127-1
Publication status	Published - 1990 Jan 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Electrical resistivity in thin film of reentrant spin glass NiMn",

abstract = "Electrical resistivity in thin films of disordered NiMn shows a minimum at Tmin which correlates with the spin glass transition temperature Tg. The signs of the film thickness dependence of Tmin are opposite for two Mn concentrations which are larger and smaller than the multicritical-point concentration (23.9 at% Mn).",

author = "T. Sato and N. Yoneyama and Y. Torii and T. Ando",

year = "1990",

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T1 - Electrical resistivity in thin film of reentrant spin glass NiMn

AU - Sato, T.

AU - Yoneyama, N.

AU - Torii, Y.

AU - Ando, T.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - Electrical resistivity in thin films of disordered NiMn shows a minimum at Tmin which correlates with the spin glass transition temperature Tg. The signs of the film thickness dependence of Tmin are opposite for two Mn concentrations which are larger and smaller than the multicritical-point concentration (23.9 at% Mn).

AB - Electrical resistivity in thin films of disordered NiMn shows a minimum at Tmin which correlates with the spin glass transition temperature Tg. The signs of the film thickness dependence of Tmin are opposite for two Mn concentrations which are larger and smaller than the multicritical-point concentration (23.9 at% Mn).

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U2 - 10.1016/S0304-8853(10)80127-1

DO - 10.1016/S0304-8853(10)80127-1

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VL - 90-91

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EP - 350

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

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