Electrical resistivity in thin film of reentrant spin glass NiMn

Electrical resistivity in thin films of disordered NiMn shows a minimum at T_min which correlates with the spin glass transition temperature T_g. The signs of the film thickness dependence of T_min are opposite for two Mn concentrations which are larger and smaller than the multicritical-point concentration (23.9 at % Mn). The samples were produced through coevaporation of Ni and Mn with E-gun evaporation technique in an ultra-high vacuum chamber (< 5 × 10^-8 Torr), and their deposition rates were independently determined with two quartz-crystal film thickness monitors.