Abstract
Electrical resistivity in thin films of disordered NiMn shows a minimum at Tmin which correlates with the spin glass transition temperature Tg. The signs of the film thickness dependence of Tmin are opposite for two Mn concentrations which are larger and smaller than the multicritical-point concentration (23.9 at% Mn).
Original language | English |
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Pages (from-to) | 349-350 |
Number of pages | 2 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 90-91 |
DOIs | |
Publication status | Published - 1990 Jan 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics