Electrically detected magnetic resonance of phosphorous due to spin dependent recombination with triplet centers in γ-irradiated silicon

W. Akhtar; H. Morishita; L. S. Vlasenko; D. S. Poloskin; K. M. Itoh

doi:10.1016/j.physb.2009.08.116

Electrically detected magnetic resonance of phosphorous due to spin dependent recombination with triplet centers in γ-irradiated silicon

W. Akhtar, H. Morishita, L. S. Vlasenko, D. S. Poloskin, K. M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Electrically detected magnetic resonance (EDMR) of phosphorus in silicon was detected in weak magnetic fields at low resonance frequencies of 200-400 MHz before and after irradiation of samples by γ-rays. EDMR spectra were detected by measuring dc-photoconductivity of samples under band-gap illumination. Phosphorus (P⁰) EDMR lines are accompanied always with the single line (S-line) with g-factor ≈2.01 originated most likely from the surface recombination centers. Strong, about 10 times, increase of the P⁰ and S signals was found in the same samples after irradiation with the doses of (3-6)×10¹⁵ γ/cm^-2. For these doses of irradiation we were also able to see the ESR transition between entangled states of phosphorous formed at low magnetic field. This shows the higher efficiency of spin dependent recombination (SDR) process in irradiated samples. In addition, several new EDMR lines emerged after irradiation. Some of them arose from the spin dependent recombination through the photoexcited triplet states of A-centers (oxygen+vacancy complex).

Original language	English
Pages (from-to)	4583-4585
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	404
Issue number	23-24
DOIs	https://doi.org/10.1016/j.physb.2009.08.116
Publication status	Published - 2009 Dec 15

Keywords

Electrically detected magnetic resonance
Radiation defects
Silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2009.08.116

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@article{a97a2bd583294f0fb5c86777f856d2de,

title = "Electrically detected magnetic resonance of phosphorous due to spin dependent recombination with triplet centers in γ-irradiated silicon",

abstract = "Electrically detected magnetic resonance (EDMR) of phosphorus in silicon was detected in weak magnetic fields at low resonance frequencies of 200-400 MHz before and after irradiation of samples by γ-rays. EDMR spectra were detected by measuring dc-photoconductivity of samples under band-gap illumination. Phosphorus (P0) EDMR lines are accompanied always with the single line (S-line) with g-factor ≈2.01 originated most likely from the surface recombination centers. Strong, about 10 times, increase of the P0 and S signals was found in the same samples after irradiation with the doses of (3-6)×1015 γ/cm-2. For these doses of irradiation we were also able to see the ESR transition between entangled states of phosphorous formed at low magnetic field. This shows the higher efficiency of spin dependent recombination (SDR) process in irradiated samples. In addition, several new EDMR lines emerged after irradiation. Some of them arose from the spin dependent recombination through the photoexcited triplet states of A-centers (oxygen+vacancy complex).",

keywords = "Electrically detected magnetic resonance, Radiation defects, Silicon",

author = "W. Akhtar and H. Morishita and Vlasenko, {L. S.} and Poloskin, {D. S.} and Itoh, {K. M.}",

note = "Funding Information: This work was supported in part by Grant-in-Aid for Scientific Research by MEXT Specially Promoted Research #18001002, in part by Special Coordination Funds for Promoting Science and Technology, in part by JST-DFG Strategic Cooperative Program on Nanoelectronics, and in part by a Grant-in-Aid for the Global Center of Excellence at Keio University.",

year = "2009",

month = dec,

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doi = "10.1016/j.physb.2009.08.116",

language = "English",

volume = "404",

pages = "4583--4585",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

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T1 - Electrically detected magnetic resonance of phosphorous due to spin dependent recombination with triplet centers in γ-irradiated silicon

AU - Akhtar, W.

AU - Morishita, H.

AU - Vlasenko, L. S.

AU - Poloskin, D. S.

AU - Itoh, K. M.

N1 - Funding Information: This work was supported in part by Grant-in-Aid for Scientific Research by MEXT Specially Promoted Research #18001002, in part by Special Coordination Funds for Promoting Science and Technology, in part by JST-DFG Strategic Cooperative Program on Nanoelectronics, and in part by a Grant-in-Aid for the Global Center of Excellence at Keio University.

PY - 2009/12/15

Y1 - 2009/12/15

N2 - Electrically detected magnetic resonance (EDMR) of phosphorus in silicon was detected in weak magnetic fields at low resonance frequencies of 200-400 MHz before and after irradiation of samples by γ-rays. EDMR spectra were detected by measuring dc-photoconductivity of samples under band-gap illumination. Phosphorus (P0) EDMR lines are accompanied always with the single line (S-line) with g-factor ≈2.01 originated most likely from the surface recombination centers. Strong, about 10 times, increase of the P0 and S signals was found in the same samples after irradiation with the doses of (3-6)×1015 γ/cm-2. For these doses of irradiation we were also able to see the ESR transition between entangled states of phosphorous formed at low magnetic field. This shows the higher efficiency of spin dependent recombination (SDR) process in irradiated samples. In addition, several new EDMR lines emerged after irradiation. Some of them arose from the spin dependent recombination through the photoexcited triplet states of A-centers (oxygen+vacancy complex).

AB - Electrically detected magnetic resonance (EDMR) of phosphorus in silicon was detected in weak magnetic fields at low resonance frequencies of 200-400 MHz before and after irradiation of samples by γ-rays. EDMR spectra were detected by measuring dc-photoconductivity of samples under band-gap illumination. Phosphorus (P0) EDMR lines are accompanied always with the single line (S-line) with g-factor ≈2.01 originated most likely from the surface recombination centers. Strong, about 10 times, increase of the P0 and S signals was found in the same samples after irradiation with the doses of (3-6)×1015 γ/cm-2. For these doses of irradiation we were also able to see the ESR transition between entangled states of phosphorous formed at low magnetic field. This shows the higher efficiency of spin dependent recombination (SDR) process in irradiated samples. In addition, several new EDMR lines emerged after irradiation. Some of them arose from the spin dependent recombination through the photoexcited triplet states of A-centers (oxygen+vacancy complex).

KW - Electrically detected magnetic resonance

KW - Radiation defects

KW - Silicon

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Electrically detected magnetic resonance of phosphorous due to spin dependent recombination with triplet centers in γ-irradiated silicon

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