Electrically induced conductivity switching in sputtered Fe 3O4 thin film

Fei Qin, Yukio Nozaki, Kimihide Matsuyama

Research output: Contribution to journalArticle

Abstract

Electric transport properties have been studied for Fe3O 4 thin films with current perpendicular to plane geometry, aiming at development of oxide spintronics devices. Excellent conductivity comparable to a bulk single crystal was attained by optimizing an under layer material and film deposition condition. A novel conductivity switching, up to three orders of magnitude, was observed. The threshold value of electric field for switching and its temperature dependence were investigated.

Original languageEnglish
Pages (from-to)85-88
Number of pages4
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume9
Issue number2
Publication statusPublished - 2004 Sep
Externally publishedYes

Fingerprint

Thin films
Magnetoelectronics
Transport properties
Electric fields
Single crystals
Oxides
Geometry
Temperature

Keywords

  • Electron transport
  • Spintronics
  • Thin film FeO
  • Verwey transition

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture
  • Engineering (miscellaneous)

Cite this

Electrically induced conductivity switching in sputtered Fe 3O4 thin film. / Qin, Fei; Nozaki, Yukio; Matsuyama, Kimihide.

In: Research Reports on Information Science and Electrical Engineering of Kyushu University, Vol. 9, No. 2, 09.2004, p. 85-88.

Research output: Contribution to journalArticle

@article{a90680c71875442e9cc1bff2e150d4c2,
title = "Electrically induced conductivity switching in sputtered Fe 3O4 thin film",
abstract = "Electric transport properties have been studied for Fe3O 4 thin films with current perpendicular to plane geometry, aiming at development of oxide spintronics devices. Excellent conductivity comparable to a bulk single crystal was attained by optimizing an under layer material and film deposition condition. A novel conductivity switching, up to three orders of magnitude, was observed. The threshold value of electric field for switching and its temperature dependence were investigated.",
keywords = "Electron transport, Spintronics, Thin film FeO, Verwey transition",
author = "Fei Qin and Yukio Nozaki and Kimihide Matsuyama",
year = "2004",
month = "9",
language = "English",
volume = "9",
pages = "85--88",
journal = "Research Reports on Information Science and Electrical Engineering of Kyushu University",
issn = "1342-3819",
publisher = "Kyushu University, Faculty of Science",
number = "2",

}

TY - JOUR

T1 - Electrically induced conductivity switching in sputtered Fe 3O4 thin film

AU - Qin, Fei

AU - Nozaki, Yukio

AU - Matsuyama, Kimihide

PY - 2004/9

Y1 - 2004/9

N2 - Electric transport properties have been studied for Fe3O 4 thin films with current perpendicular to plane geometry, aiming at development of oxide spintronics devices. Excellent conductivity comparable to a bulk single crystal was attained by optimizing an under layer material and film deposition condition. A novel conductivity switching, up to three orders of magnitude, was observed. The threshold value of electric field for switching and its temperature dependence were investigated.

AB - Electric transport properties have been studied for Fe3O 4 thin films with current perpendicular to plane geometry, aiming at development of oxide spintronics devices. Excellent conductivity comparable to a bulk single crystal was attained by optimizing an under layer material and film deposition condition. A novel conductivity switching, up to three orders of magnitude, was observed. The threshold value of electric field for switching and its temperature dependence were investigated.

KW - Electron transport

KW - Spintronics

KW - Thin film FeO

KW - Verwey transition

UR - http://www.scopus.com/inward/record.url?scp=9144225985&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=9144225985&partnerID=8YFLogxK

M3 - Article

VL - 9

SP - 85

EP - 88

JO - Research Reports on Information Science and Electrical Engineering of Kyushu University

JF - Research Reports on Information Science and Electrical Engineering of Kyushu University

SN - 1342-3819

IS - 2

ER -