Electro-optic modulator based on photolithography fabricated p-i-n integrated photonic crystal nanocavity

Nurul Ashikin Binti Daud; Yuta Ooka; Tomohisa Tabata; Tomohiro Tetsumoto; Takasumi Tanabe

doi:10.1587/transele.E100.C.670

Electro-optic modulator based on photolithography fabricated p-i-n integrated photonic crystal nanocavity

Nurul Ashikin Binti Daud, Yuta Ooka, Tomohisa Tabata, Tomohiro Tetsumoto, Takasumi Tanabe

Department of Electronics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We present the first demonstration of an electro-optic modulator based on a photolithographically fabricated photonic crystal (PhC) nanocavity with a p-i-n junction with SiO₂ cladding. We show that the device exhibits an ultrahigh quality factor (Q ∼ 10⁵) and allow us to demonstrate electro-optic modulation through the integrated p-i-n diode structure. We demonstrate an electro-optic modulation based on the carrier injection.

Original language	English
Pages (from-to)	670-674
Number of pages	5
Journal	IEICE Transactions on Electronics
Volume	E100C
Issue number	8
DOIs	https://doi.org/10.1587/transele.E100.C.670
Publication status	Published - 2017 Aug

Keywords

Electro-optic devices
Integrated optics
Modulators
Nanophotonics
Opto-electronics
Photonic crystal

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1587/transele.E100.C.670

Cite this

@article{ca25439fd2af4bcbbd3603d87890e080,

title = "Electro-optic modulator based on photolithography fabricated p-i-n integrated photonic crystal nanocavity",

abstract = "We present the first demonstration of an electro-optic modulator based on a photolithographically fabricated photonic crystal (PhC) nanocavity with a p-i-n junction with SiO2 cladding. We show that the device exhibits an ultrahigh quality factor (Q ∼ 105) and allow us to demonstrate electro-optic modulation through the integrated p-i-n diode structure. We demonstrate an electro-optic modulation based on the carrier injection.",

keywords = "Electro-optic devices, Integrated optics, Modulators, Nanophotonics, Opto-electronics, Photonic crystal",

author = "Daud, {Nurul Ashikin Binti} and Yuta Ooka and Tomohisa Tabata and Tomohiro Tetsumoto and Takasumi Tanabe",

note = "Publisher Copyright: {\textcopyright} 2017 The Institute of Electronics, Information and Communication Engineers.",

year = "2017",

month = aug,

doi = "10.1587/transele.E100.C.670",

language = "English",

volume = "E100C",

pages = "670--674",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "8",

}

TY - JOUR

T1 - Electro-optic modulator based on photolithography fabricated p-i-n integrated photonic crystal nanocavity

AU - Daud, Nurul Ashikin Binti

AU - Ooka, Yuta

AU - Tabata, Tomohisa

AU - Tetsumoto, Tomohiro

AU - Tanabe, Takasumi

PY - 2017/8

Y1 - 2017/8

N2 - We present the first demonstration of an electro-optic modulator based on a photolithographically fabricated photonic crystal (PhC) nanocavity with a p-i-n junction with SiO2 cladding. We show that the device exhibits an ultrahigh quality factor (Q ∼ 105) and allow us to demonstrate electro-optic modulation through the integrated p-i-n diode structure. We demonstrate an electro-optic modulation based on the carrier injection.

AB - We present the first demonstration of an electro-optic modulator based on a photolithographically fabricated photonic crystal (PhC) nanocavity with a p-i-n junction with SiO2 cladding. We show that the device exhibits an ultrahigh quality factor (Q ∼ 105) and allow us to demonstrate electro-optic modulation through the integrated p-i-n diode structure. We demonstrate an electro-optic modulation based on the carrier injection.

KW - Electro-optic devices

KW - Integrated optics

KW - Modulators

KW - Nanophotonics

KW - Opto-electronics

KW - Photonic crystal

UR - http://www.scopus.com/inward/record.url?scp=85026539312&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85026539312&partnerID=8YFLogxK

U2 - 10.1587/transele.E100.C.670

DO - 10.1587/transele.E100.C.670

M3 - Article

AN - SCOPUS:85026539312

VL - E100C

SP - 670

EP - 674

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

SN - 0916-8524

IS - 8

ER -

Electro-optic modulator based on photolithography fabricated p-i-n integrated photonic crystal nanocavity

Abstract

Keywords

ASJC Scopus subject areas

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