Abstract
We present the first demonstration of an electro-optic modulator based on a photolithographically fabricated photonic crystal (PhC) nanocavity with a p-i-n junction with SiO2 cladding. We show that the device exhibits an ultrahigh quality factor (Q ∼ 105) and allow us to demonstrate electro-optic modulation through the integrated p-i-n diode structure. We demonstrate an electro-optic modulation based on the carrier injection.
| Original language | English |
|---|---|
| Pages (from-to) | 670-674 |
| Number of pages | 5 |
| Journal | IEICE Transactions on Electronics |
| Volume | E100C |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2017 Aug 1 |
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Keywords
- Electro-optic devices
- Integrated optics
- Modulators
- Nanophotonics
- Opto-electronics
- Photonic crystal
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Electro-optic modulator based on photolithography fabricated p-i-n integrated photonic crystal nanocavity. / Daud, Nurul Ashikin Binti; Ooka, Yuta; Tabata, Tomohisa; Tetsumoto, Tomohiro; Tanabe, Takasumi.
In: IEICE Transactions on Electronics, Vol. E100C, No. 8, 01.08.2017, p. 670-674.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electro-optic modulator based on photolithography fabricated p-i-n integrated photonic crystal nanocavity
AU - Daud, Nurul Ashikin Binti
AU - Ooka, Yuta
AU - Tabata, Tomohisa
AU - Tetsumoto, Tomohiro
AU - Tanabe, Takasumi
PY - 2017/8/1
Y1 - 2017/8/1
N2 - We present the first demonstration of an electro-optic modulator based on a photolithographically fabricated photonic crystal (PhC) nanocavity with a p-i-n junction with SiO2 cladding. We show that the device exhibits an ultrahigh quality factor (Q ∼ 105) and allow us to demonstrate electro-optic modulation through the integrated p-i-n diode structure. We demonstrate an electro-optic modulation based on the carrier injection.
AB - We present the first demonstration of an electro-optic modulator based on a photolithographically fabricated photonic crystal (PhC) nanocavity with a p-i-n junction with SiO2 cladding. We show that the device exhibits an ultrahigh quality factor (Q ∼ 105) and allow us to demonstrate electro-optic modulation through the integrated p-i-n diode structure. We demonstrate an electro-optic modulation based on the carrier injection.
KW - Electro-optic devices
KW - Integrated optics
KW - Modulators
KW - Nanophotonics
KW - Opto-electronics
KW - Photonic crystal
UR - http://www.scopus.com/inward/record.url?scp=85026539312&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85026539312&partnerID=8YFLogxK
U2 - 10.1587/transele.E100.C.670
DO - 10.1587/transele.E100.C.670
M3 - Article
AN - SCOPUS:85026539312
VL - E100C
SP - 670
EP - 674
JO - IEICE Transactions on Electronics
JF - IEICE Transactions on Electronics
SN - 0916-8524
IS - 8
ER -