TY - CHAP
T1 - Electron beam assisted chemical etching of single crystal diamond substrates
AU - Taniguchi, Jun
AU - Miyamoto, Iwao
AU - Ohno, Naoto
AU - Honda, Satoshi
PY - 1996/12
Y1 - 1996/12
N2 - Electron beam assisted chemical etching (EBACE) with oxygen gas is applicable to direct fine patterning of single crystal diamond substrates. A scanning electron microscope (SEM) combined with an oxygen gas introduction system was used for EBACE of diamond. In order to prevent surface charge-up during etching and SEM observation, a hydrocarbon contamination layer, which has conductivity and can be deposited during electron beam irradiation using oil vapor in a vacuum system, was used. Etching characteristics of single crystal diamond substrates by EBACE with oxygen gas were mainly investigated. It was found by in-situ SEM observation that hole, line and rectangular patterns with several μm2 area and sub-μm depth into the diamond substrates were successfully fabricated by EBACE utilizing spot, line and raster scanning modes of the SEM. The depths of holes and rectangular patterns were proportional to electron beam exposure times. Etched areas of line and rectangular patterns were larger than scanned area. An etching yield of 1.99 × 10-2 carbon atoms of diamond per electron has been observed for EBACE using oxygen gas.
AB - Electron beam assisted chemical etching (EBACE) with oxygen gas is applicable to direct fine patterning of single crystal diamond substrates. A scanning electron microscope (SEM) combined with an oxygen gas introduction system was used for EBACE of diamond. In order to prevent surface charge-up during etching and SEM observation, a hydrocarbon contamination layer, which has conductivity and can be deposited during electron beam irradiation using oil vapor in a vacuum system, was used. Etching characteristics of single crystal diamond substrates by EBACE with oxygen gas were mainly investigated. It was found by in-situ SEM observation that hole, line and rectangular patterns with several μm2 area and sub-μm depth into the diamond substrates were successfully fabricated by EBACE utilizing spot, line and raster scanning modes of the SEM. The depths of holes and rectangular patterns were proportional to electron beam exposure times. Etched areas of line and rectangular patterns were larger than scanned area. An etching yield of 1.99 × 10-2 carbon atoms of diamond per electron has been observed for EBACE using oxygen gas.
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M3 - Chapter
AN - SCOPUS:0030410876
T3 - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
SP - 6347
EP - 6695
BT - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
A2 - Aoyagi, Y.
A2 - Atoda, N.
A2 - Fukui, T.
A2 - Komuro, M.
A2 - Kotera, M.
A2 - et al, al
T2 - Proceedings of the 1996 9th International MicroProcess Conference, MPC'96
Y2 - 8 July 1996 through 11 July 1996
ER -