Electron dynamics and device physics of short-channel HEMTs: Transverse-domain formation, velocity overshoot, and short-channel effects

Yuji Awano, Makoto Kosugi, Shigeru Kuroda, Takashi Mimura, Masayuki Abe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

The authors simulated the electron dynamics and physics in sub-quarter-micron-gate HEMTs (high electron mobility transistors) and fabricated devices for testing their theories on the short-channel effect. They confirmed near-ballistic electron transport under the gate and predicted transverse-domain formation. They introduce a parameter called the channel aspect ratio, which could serve as a design rule for determining the extent of the short-channel effect. Measurements show that the threshold voltage shift is almost negligible for gates as short as 0.14 μm. Thus, within the range studied, HEMTs do require a special design that would limit their applications.

Original languageEnglish
Title of host publicationProc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit
Editors Anon
PublisherPubl by IEEE
Pages46-55
Number of pages10
Publication statusPublished - 1989
Externally publishedYes
EventProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
Duration: 1989 Aug 71989 Aug 9

Other

OtherProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period89/8/789/8/9

Fingerprint

High electron mobility transistors
Physics
Electrons
Ballistics
Threshold voltage
Aspect ratio
Testing
Electron Transport

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Awano, Y., Kosugi, M., Kuroda, S., Mimura, T., & Abe, M. (1989). Electron dynamics and device physics of short-channel HEMTs: Transverse-domain formation, velocity overshoot, and short-channel effects. In Anon (Ed.), Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit (pp. 46-55). Publ by IEEE.

Electron dynamics and device physics of short-channel HEMTs : Transverse-domain formation, velocity overshoot, and short-channel effects. / Awano, Yuji; Kosugi, Makoto; Kuroda, Shigeru; Mimura, Takashi; Abe, Masayuki.

Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit. ed. / Anon. Publ by IEEE, 1989. p. 46-55.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Awano, Y, Kosugi, M, Kuroda, S, Mimura, T & Abe, M 1989, Electron dynamics and device physics of short-channel HEMTs: Transverse-domain formation, velocity overshoot, and short-channel effects. in Anon (ed.), Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit. Publ by IEEE, pp. 46-55, Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 89/8/7.
Awano Y, Kosugi M, Kuroda S, Mimura T, Abe M. Electron dynamics and device physics of short-channel HEMTs: Transverse-domain formation, velocity overshoot, and short-channel effects. In Anon, editor, Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit. Publ by IEEE. 1989. p. 46-55
Awano, Yuji ; Kosugi, Makoto ; Kuroda, Shigeru ; Mimura, Takashi ; Abe, Masayuki. / Electron dynamics and device physics of short-channel HEMTs : Transverse-domain formation, velocity overshoot, and short-channel effects. Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit. editor / Anon. Publ by IEEE, 1989. pp. 46-55
@inproceedings{ed814cbca9574d679623395bc821c45c,
title = "Electron dynamics and device physics of short-channel HEMTs: Transverse-domain formation, velocity overshoot, and short-channel effects",
abstract = "The authors simulated the electron dynamics and physics in sub-quarter-micron-gate HEMTs (high electron mobility transistors) and fabricated devices for testing their theories on the short-channel effect. They confirmed near-ballistic electron transport under the gate and predicted transverse-domain formation. They introduce a parameter called the channel aspect ratio, which could serve as a design rule for determining the extent of the short-channel effect. Measurements show that the threshold voltage shift is almost negligible for gates as short as 0.14 μm. Thus, within the range studied, HEMTs do require a special design that would limit their applications.",
author = "Yuji Awano and Makoto Kosugi and Shigeru Kuroda and Takashi Mimura and Masayuki Abe",
year = "1989",
language = "English",
pages = "46--55",
editor = "Anon",
booktitle = "Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit",
publisher = "Publ by IEEE",

}

TY - GEN

T1 - Electron dynamics and device physics of short-channel HEMTs

T2 - Transverse-domain formation, velocity overshoot, and short-channel effects

AU - Awano, Yuji

AU - Kosugi, Makoto

AU - Kuroda, Shigeru

AU - Mimura, Takashi

AU - Abe, Masayuki

PY - 1989

Y1 - 1989

N2 - The authors simulated the electron dynamics and physics in sub-quarter-micron-gate HEMTs (high electron mobility transistors) and fabricated devices for testing their theories on the short-channel effect. They confirmed near-ballistic electron transport under the gate and predicted transverse-domain formation. They introduce a parameter called the channel aspect ratio, which could serve as a design rule for determining the extent of the short-channel effect. Measurements show that the threshold voltage shift is almost negligible for gates as short as 0.14 μm. Thus, within the range studied, HEMTs do require a special design that would limit their applications.

AB - The authors simulated the electron dynamics and physics in sub-quarter-micron-gate HEMTs (high electron mobility transistors) and fabricated devices for testing their theories on the short-channel effect. They confirmed near-ballistic electron transport under the gate and predicted transverse-domain formation. They introduce a parameter called the channel aspect ratio, which could serve as a design rule for determining the extent of the short-channel effect. Measurements show that the threshold voltage shift is almost negligible for gates as short as 0.14 μm. Thus, within the range studied, HEMTs do require a special design that would limit their applications.

UR - http://www.scopus.com/inward/record.url?scp=0024906762&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024906762&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0024906762

SP - 46

EP - 55

BT - Proc IEEE Cornell Conf Adv Concept High Speed Semicond Device Circuit

A2 - Anon, null

PB - Publ by IEEE

ER -