Electron dynamics and device physics of short-channel HEMTs: Transverse-domain formation, velocity overshoot, and short-channel effects

Yuji Awano, Makoto Kosugi, Shigeru Kuroda, Takashi Mimura, Masayuki Abe

Research output: Contribution to conferencePaper

8 Citations (Scopus)

Abstract

The authors simulated the electron dynamics and physics in sub-quarter-micron-gate HEMTs (high electron mobility transistors) and fabricated devices for testing their theories on the short-channel effect. They confirmed near-ballistic electron transport under the gate and predicted transverse-domain formation. They introduce a parameter called the channel aspect ratio, which could serve as a design rule for determining the extent of the short-channel effect. Measurements show that the threshold voltage shift is almost negligible for gates as short as 0.14 μm. Thus, within the range studied, HEMTs do require a special design that would limit their applications.

Original languageEnglish
Pages46-55
Number of pages10
Publication statusPublished - 1989 Dec 1
Externally publishedYes
EventProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
Duration: 1989 Aug 71989 Aug 9

Other

OtherProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period89/8/789/8/9

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Electron dynamics and device physics of short-channel HEMTs: Transverse-domain formation, velocity overshoot, and short-channel effects'. Together they form a unique fingerprint.

  • Cite this

    Awano, Y., Kosugi, M., Kuroda, S., Mimura, T., & Abe, M. (1989). Electron dynamics and device physics of short-channel HEMTs: Transverse-domain formation, velocity overshoot, and short-channel effects. 46-55. Paper presented at Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, .