Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

H. Tezuka, A. R. Stegner, A. M. Tyryshkin, S. Shankar, M. L.W. Thewalt, S. A. Lyon, K. M. Itoh, M. S. Brandt

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

Original languageEnglish
Article number161203
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number16
DOIs
Publication statusPublished - 2010 Apr 19

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Electron paramagnetic resonance of boron acceptors in isotopically purified silicon'. Together they form a unique fingerprint.

Cite this