Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

H. Tezuka, A. R. Stegner, A. M. Tyryshkin, S. Shankar, M. L W Thewalt, S. A. Lyon, Kohei M Itoh, M. S. Brandt

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

Original languageEnglish
Article number161203
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number16
DOIs
Publication statusPublished - 2010 Apr 19

Fingerprint

Boron
Silicon
Paramagnetic resonance
electron paramagnetic resonance
boron
substructures
silicon
Linewidth
Microwaves
Single crystals
visible spectrum
microwaves
augmentation
single crystals
excitation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Tezuka, H., Stegner, A. R., Tyryshkin, A. M., Shankar, S., Thewalt, M. L. W., Lyon, S. A., ... Brandt, M. S. (2010). Electron paramagnetic resonance of boron acceptors in isotopically purified silicon. Physical Review B - Condensed Matter and Materials Physics, 81(16), [161203]. https://doi.org/10.1103/PhysRevB.81.161203

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon. / Tezuka, H.; Stegner, A. R.; Tyryshkin, A. M.; Shankar, S.; Thewalt, M. L W; Lyon, S. A.; Itoh, Kohei M; Brandt, M. S.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 81, No. 16, 161203, 19.04.2010.

Research output: Contribution to journalArticle

Tezuka, H. ; Stegner, A. R. ; Tyryshkin, A. M. ; Shankar, S. ; Thewalt, M. L W ; Lyon, S. A. ; Itoh, Kohei M ; Brandt, M. S. / Electron paramagnetic resonance of boron acceptors in isotopically purified silicon. In: Physical Review B - Condensed Matter and Materials Physics. 2010 ; Vol. 81, No. 16.
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