Electron spin coherence exceeding seconds in high-purity silicon

Alexei M. Tyryshkin, Shinichi Tojo, John J L Morton, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans Joachim Pohl, Thomas Schenkel, Michael L W Thewalt, Kohei M Itoh, S. A. Lyon

Research output: Contribution to journalArticle

370 Citations (Scopus)

Abstract

Silicon is one of the most promising semiconductor materials for spin-based information processing devices. Its advanced fabrication technology facilitates the transition from individual devices to large-scale processors, and the availability of a 28Si form with no magnetic nuclei overcomes a primary source of spin decoherence in many other materials. Nevertheless, the coherence lifetimes of electron spins in the solid state have typically remained several orders of magnitude lower than that achieved in isolated high-vacuum systems such as trapped ions. Here we examine electron spin coherence of donors in pure 28Si material (residual 29Si concentration <50 ppm) with donor densities of 10 14-10 15 cm 3. We elucidate three mechanisms for spin decoherence, active at different temperatures, and extract a coherence lifetime T 2 up to 2 s. In this regime, we find the electron spin is sensitive to interactions with other donor electron spins separated by ∼200 nm. A magnetic field gradient suppresses such interactions, producing an extrapolated electron spin T 2 of 10 s at 1.8 K. These coherence lifetimes are without peer in the solid state and comparable to high-vacuum qubits, making electron spins of donors in silicon ideal components of quantum computers, or quantum memories for systems such as superconducting qubits.

Original languageEnglish
Pages (from-to)143-147
Number of pages5
JournalNature Materials
Volume11
Issue number2
DOIs
Publication statusPublished - 2012 Feb

Fingerprint

Silicon
electron spin
purity
Electrons
silicon
high vacuum
life (durability)
Trapped ions
Vacuum
solid state
Quantum computers
quantum computers
vacuum systems
availability
central processing units
Computer systems
Availability
interactions
Semiconductor materials
Magnetic fields

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Condensed Matter Physics
  • Materials Science(all)
  • Chemistry(all)

Cite this

Tyryshkin, A. M., Tojo, S., Morton, J. J. L., Riemann, H., Abrosimov, N. V., Becker, P., ... Lyon, S. A. (2012). Electron spin coherence exceeding seconds in high-purity silicon. Nature Materials, 11(2), 143-147. https://doi.org/10.1038/nmat3182

Electron spin coherence exceeding seconds in high-purity silicon. / Tyryshkin, Alexei M.; Tojo, Shinichi; Morton, John J L; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans Joachim; Schenkel, Thomas; Thewalt, Michael L W; Itoh, Kohei M; Lyon, S. A.

In: Nature Materials, Vol. 11, No. 2, 02.2012, p. 143-147.

Research output: Contribution to journalArticle

Tyryshkin, AM, Tojo, S, Morton, JJL, Riemann, H, Abrosimov, NV, Becker, P, Pohl, HJ, Schenkel, T, Thewalt, MLW, Itoh, KM & Lyon, SA 2012, 'Electron spin coherence exceeding seconds in high-purity silicon', Nature Materials, vol. 11, no. 2, pp. 143-147. https://doi.org/10.1038/nmat3182
Tyryshkin AM, Tojo S, Morton JJL, Riemann H, Abrosimov NV, Becker P et al. Electron spin coherence exceeding seconds in high-purity silicon. Nature Materials. 2012 Feb;11(2):143-147. https://doi.org/10.1038/nmat3182
Tyryshkin, Alexei M. ; Tojo, Shinichi ; Morton, John J L ; Riemann, Helge ; Abrosimov, Nikolai V. ; Becker, Peter ; Pohl, Hans Joachim ; Schenkel, Thomas ; Thewalt, Michael L W ; Itoh, Kohei M ; Lyon, S. A. / Electron spin coherence exceeding seconds in high-purity silicon. In: Nature Materials. 2012 ; Vol. 11, No. 2. pp. 143-147.
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