Electron-spin phase relaxation of phosphorus donors in nuclear-spin- enriched silicon

Eisuke Abe, Kohei M Itoh, Junichi Isoya, Satoshi Yamasaki

Research output: Contribution to journalArticle

87 Citations (Scopus)

Abstract

We report a pulsed electron paramagnetic resonance study of the phase relaxation of electron spins bound to phosphorus donors in isotopically purified 29Si and natural abundance Si (natSi) single crystals measured at 8 K, The two-pulse echo decay curves for both samples show quadratic dependence on time, and the electron phase relaxation time TM for 29Si is about an order of magnitude shorter than that for natSi. The orientation dependence of TM demonstrates that the phase relaxation is caused by spectral diffusion due to flip-flops of the host nuclear spins. The electron spin echo envelope modulation effects in 29Si are analyzed in the frequency domain.

Original languageEnglish
Article number033204
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number3
DOIs
Publication statusPublished - 2004 Jul

Fingerprint

Silicon
nuclear spin
electron spin
Phosphorus
phosphorus
echoes
flip-flops
Electrons
silicon
electron paramagnetic resonance
envelopes
Flip flop circuits
relaxation time
modulation
Relaxation time
Paramagnetic resonance
single crystals
decay
curves
pulses

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Electron-spin phase relaxation of phosphorus donors in nuclear-spin- enriched silicon. / Abe, Eisuke; Itoh, Kohei M; Isoya, Junichi; Yamasaki, Satoshi.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 70, No. 3, 033204, 07.2004.

Research output: Contribution to journalArticle

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AB - We report a pulsed electron paramagnetic resonance study of the phase relaxation of electron spins bound to phosphorus donors in isotopically purified 29Si and natural abundance Si (natSi) single crystals measured at 8 K, The two-pulse echo decay curves for both samples show quadratic dependence on time, and the electron phase relaxation time TM for 29Si is about an order of magnitude shorter than that for natSi. The orientation dependence of TM demonstrates that the phase relaxation is caused by spectral diffusion due to flip-flops of the host nuclear spins. The electron spin echo envelope modulation effects in 29Si are analyzed in the frequency domain.

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