Electron spin resonance study of surface and oxide interface spin-triplet centers on (100) silicon wafers

H. Saito, S. Hayashi, Y. Kusano, Kohei M Itoh, M. P. Vlasenko, L. S. Vlasenko

Research output: Contribution to journalArticle

Abstract

Electron spin resonance (ESR) spectra of surface and interface recombination centers recently observed on (001) silicon wafers, labeled Pm and KU1, were studied using spin dependent microwave photoconductivity. Both ESR spectra, having the orthorhombic symmetry and spins S = 1/2 and S = 1 for Pm and KU1, respectively, were observed in the commercially available surface oxidized (001)-Si wafers. Systematic studies on annealing and oxidation conditions for the Pm and KU1 formation conclude that both ESR spectra arise from the same center that contains the interaction between the two nearest Si dangling bonds on the (001) Si surface.

Original languageEnglish
Article number161582
JournalJournal of Applied Physics
Volume123
Issue number16
DOIs
Publication statusPublished - 2018 Apr 28

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electron paramagnetic resonance
wafers
oxides
silicon
photoconductivity
microwaves
oxidation
annealing
symmetry
interactions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Electron spin resonance study of surface and oxide interface spin-triplet centers on (100) silicon wafers. / Saito, H.; Hayashi, S.; Kusano, Y.; Itoh, Kohei M; Vlasenko, M. P.; Vlasenko, L. S.

In: Journal of Applied Physics, Vol. 123, No. 16, 161582, 28.04.2018.

Research output: Contribution to journalArticle

Saito, H. ; Hayashi, S. ; Kusano, Y. ; Itoh, Kohei M ; Vlasenko, M. P. ; Vlasenko, L. S. / Electron spin resonance study of surface and oxide interface spin-triplet centers on (100) silicon wafers. In: Journal of Applied Physics. 2018 ; Vol. 123, No. 16.
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