Electron transport coefficients in SiH4 and Si2H6 in dc and rf fields

T. Shimada, Y. Nakamura, Z. Lj Petrović, T. Makabe

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18 Citations (Scopus)

Abstract

We have calculated data for electron transport in SiH4 and Si2H6 which may serve as the basis for modelling physical and chemical processes in radio frequency (rf) plasmas. A direct numerical procedure was used to solve the Boltzmann equation and to obtain exact transport coefficients. It was shown that the cross section set that was adopted gives good agreement with the available experimental transport coefficients. Furthermore, we have calculated the features of the transport coefficients in rf fields. In both gases we observe good examples of anomalous longitudinal diffusion, time-dependent negative differential conductivity and complex temporal relaxation of momentum and energy. The behaviour of the transport coefficients may be correlated with the temporal development of the components of the velocity distribution function.

Original languageEnglish
Pages (from-to)1936-1946
Number of pages11
JournalJournal of Physics D: Applied Physics
Volume36
Issue number16
DOIs
Publication statusPublished - 2003 Aug 21

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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