Abstract
Electron transport in the surface oxidized Si nanocrystals ensembles is described based on electrical measurements of thin film transistor structures as functions of temperature and voltage. Contact resistance has been greatly reduced by using a heavily doped silicon-on-insulator layer as electrodes, compared with devices based on Al/SiNCs/Al structures. Traps with the activation energy of 147 and 103 meV have been found when SiNC channels are applied with high gate voltage. The mechanism that these two traps successively dominate the Poole-Frenkel type conduction in low and high drain-source voltage region is discussed based on an assumption that the density of these two traps is different. Trapped carriers' effects on the electric field distribution are believed to be responsible for the difference of the G- Vds 1/2 slopes in the different drain-sources regions, which is in accord with the experimental results of the hydrogen annealing treatment. The carrier mobility is also discussed based on the measurement of gate voltage dependence of the drain-source current.
| Original language | English |
|---|---|
| Article number | 044511 |
| Journal | Journal of Applied Physics |
| Volume | 106 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2009 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure. / Zhou, Xin; Uchida, Ken; Mizuta, Hiroshi; Oda, Shunri.
In: Journal of Applied Physics, Vol. 106, No. 4, 044511, 2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure
AU - Zhou, Xin
AU - Uchida, Ken
AU - Mizuta, Hiroshi
AU - Oda, Shunri
PY - 2009
Y1 - 2009
N2 - Electron transport in the surface oxidized Si nanocrystals ensembles is described based on electrical measurements of thin film transistor structures as functions of temperature and voltage. Contact resistance has been greatly reduced by using a heavily doped silicon-on-insulator layer as electrodes, compared with devices based on Al/SiNCs/Al structures. Traps with the activation energy of 147 and 103 meV have been found when SiNC channels are applied with high gate voltage. The mechanism that these two traps successively dominate the Poole-Frenkel type conduction in low and high drain-source voltage region is discussed based on an assumption that the density of these two traps is different. Trapped carriers' effects on the electric field distribution are believed to be responsible for the difference of the G- Vds 1/2 slopes in the different drain-sources regions, which is in accord with the experimental results of the hydrogen annealing treatment. The carrier mobility is also discussed based on the measurement of gate voltage dependence of the drain-source current.
AB - Electron transport in the surface oxidized Si nanocrystals ensembles is described based on electrical measurements of thin film transistor structures as functions of temperature and voltage. Contact resistance has been greatly reduced by using a heavily doped silicon-on-insulator layer as electrodes, compared with devices based on Al/SiNCs/Al structures. Traps with the activation energy of 147 and 103 meV have been found when SiNC channels are applied with high gate voltage. The mechanism that these two traps successively dominate the Poole-Frenkel type conduction in low and high drain-source voltage region is discussed based on an assumption that the density of these two traps is different. Trapped carriers' effects on the electric field distribution are believed to be responsible for the difference of the G- Vds 1/2 slopes in the different drain-sources regions, which is in accord with the experimental results of the hydrogen annealing treatment. The carrier mobility is also discussed based on the measurement of gate voltage dependence of the drain-source current.
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U2 - 10.1063/1.3204669
DO - 10.1063/1.3204669
M3 - Article
AN - SCOPUS:69749086464
VL - 106
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 4
M1 - 044511
ER -