Electron Transport Through Coupled Quantum Dots below the Kondo Temperature

Tomosuke Aono, Mikio Eto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Conductance G through coupled quantum dots in series is investigated below the Kondo temperature, based on the slave boson formalism of the Anderson model with the antiferromagnetic spin-spin coupling J. Electron transport is characterized by the ratio of the dot-dot tunneling coupling VC to the level broadening in the dots Δ (dot-lead coupling). When VC/Δ < 1, the Kondo resonance is formed in each dot and lead and G is determined by hopping between the two Kondo states. They are replaced by a spin-singlet state in the dots for low gate voltages. The gate voltage dependence of G has a sharp peak of 2e2/h in height in the crossover region between the spin-singlet and Kondo states. When Vc/Δ > 1, the Kondo levels are split below and above the Fermi level in the leads for low gate voltages. The gate voltage dependence of G has a broad peak, which is fairly robust against J. This broad peak is divided into two peaks when the energy levels are different between the dots.

Original languageEnglish
Pages (from-to)401-408
Number of pages8
JournalJournal of Low Temperature Physics
Volume118
Issue number5-6
Publication statusPublished - 2000

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Semiconductor quantum dots
quantum dots
Bosons
Electric potential
Fermi level
Electron energy levels
spin-spin coupling
electrons
Lead
electric potential
Temperature
temperature
bosons
energy levels
formalism
Electron Transport

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electron Transport Through Coupled Quantum Dots below the Kondo Temperature. / Aono, Tomosuke; Eto, Mikio.

In: Journal of Low Temperature Physics, Vol. 118, No. 5-6, 2000, p. 401-408.

Research output: Contribution to journalArticle

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