Abstract
Conductance G through coupled quantum dots in series is investigated below the Kondo temperature, based on the slave boson formalism of the Anderson model with the antiferromagnetic spin-spin coupling J. Electron transport is characterized by the ratio of the dot-dot tunneling coupling VC to the level broadening in the dots Δ (dot-lead coupling). When VC/Δ < 1, the Kondo resonance is formed in each dot and lead and G is determined by hopping between the two Kondo states. They are replaced by a spin-singlet state in the dots for low gate voltages. The gate voltage dependence of G has a sharp peak of 2e2/h in height in the crossover region between the spin-singlet and Kondo states. When Vc/Δ > 1, the Kondo levels are split below and above the Fermi level in the leads for low gate voltages. The gate voltage dependence of G has a broad peak, which is fairly robust against J. This broad peak is divided into two peaks when the energy levels are different between the dots.
| Original language | English |
|---|---|
| Pages (from-to) | 401-408 |
| Number of pages | 8 |
| Journal | Journal of Low Temperature Physics |
| Volume | 118 |
| Issue number | 5-6 |
| Publication status | Published - 2000 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Electron Transport Through Coupled Quantum Dots below the Kondo Temperature. / Aono, Tomosuke; Eto, Mikio.
In: Journal of Low Temperature Physics, Vol. 118, No. 5-6, 2000, p. 401-408.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electron Transport Through Coupled Quantum Dots below the Kondo Temperature
AU - Aono, Tomosuke
AU - Eto, Mikio
PY - 2000
Y1 - 2000
N2 - Conductance G through coupled quantum dots in series is investigated below the Kondo temperature, based on the slave boson formalism of the Anderson model with the antiferromagnetic spin-spin coupling J. Electron transport is characterized by the ratio of the dot-dot tunneling coupling VC to the level broadening in the dots Δ (dot-lead coupling). When VC/Δ < 1, the Kondo resonance is formed in each dot and lead and G is determined by hopping between the two Kondo states. They are replaced by a spin-singlet state in the dots for low gate voltages. The gate voltage dependence of G has a sharp peak of 2e2/h in height in the crossover region between the spin-singlet and Kondo states. When Vc/Δ > 1, the Kondo levels are split below and above the Fermi level in the leads for low gate voltages. The gate voltage dependence of G has a broad peak, which is fairly robust against J. This broad peak is divided into two peaks when the energy levels are different between the dots.
AB - Conductance G through coupled quantum dots in series is investigated below the Kondo temperature, based on the slave boson formalism of the Anderson model with the antiferromagnetic spin-spin coupling J. Electron transport is characterized by the ratio of the dot-dot tunneling coupling VC to the level broadening in the dots Δ (dot-lead coupling). When VC/Δ < 1, the Kondo resonance is formed in each dot and lead and G is determined by hopping between the two Kondo states. They are replaced by a spin-singlet state in the dots for low gate voltages. The gate voltage dependence of G has a sharp peak of 2e2/h in height in the crossover region between the spin-singlet and Kondo states. When Vc/Δ > 1, the Kondo levels are split below and above the Fermi level in the leads for low gate voltages. The gate voltage dependence of G has a broad peak, which is fairly robust against J. This broad peak is divided into two peaks when the energy levels are different between the dots.
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M3 - Article
AN - SCOPUS:0004397383
VL - 118
SP - 401
EP - 408
JO - Journal of Low Temperature Physics
JF - Journal of Low Temperature Physics
SN - 0022-2291
IS - 5-6
ER -