TY - JOUR
T1 - Electron transport through silicon serial triple quantum dots
AU - Yamahata, Gento
AU - Tsuchiya, Yoshishige
AU - Mizuta, Hiroshi
AU - Uchida, Ken
AU - Oda, Shunri
N1 - Funding Information:
We thank Tasuku Nagami and Stuart Boden for valuable discussions. This work was partly supported by KAKENHI (19·10625). One of authors, (G.Y.), is supported by the JSPS Research Fellowship for Young Scientists.
PY - 2009/7
Y1 - 2009/7
N2 - We study the electron transport through silicon serial triple quantum dots (TQDs) formed effectively in a lithographically-defined multiple quantum dot system on a silicon-on-insulator substrate at a temperature of 4.2 K. Our serial TQDs are composed of two lithographically-patterned QDs and another one in-between formed by stress during the pattern-dependent oxidation process. The TQDs formation is confirmed by equivalent circuit simulations, which show an excellent agreement with the experimental results. With detailed analysis of the charge configurations in the TQDs, we discuss the distinct properties of the TQDs, including electron transport at the charge quadruple points. In addition, we discuss higher order tunneling processes of the TQDs. The analysis of electron states in the silicon TQDs is a crucial step toward the future implementation of integrated silicon quantum information devices.
AB - We study the electron transport through silicon serial triple quantum dots (TQDs) formed effectively in a lithographically-defined multiple quantum dot system on a silicon-on-insulator substrate at a temperature of 4.2 K. Our serial TQDs are composed of two lithographically-patterned QDs and another one in-between formed by stress during the pattern-dependent oxidation process. The TQDs formation is confirmed by equivalent circuit simulations, which show an excellent agreement with the experimental results. With detailed analysis of the charge configurations in the TQDs, we discuss the distinct properties of the TQDs, including electron transport at the charge quadruple points. In addition, we discuss higher order tunneling processes of the TQDs. The analysis of electron states in the silicon TQDs is a crucial step toward the future implementation of integrated silicon quantum information devices.
KW - Coulomb blockade
KW - Silicon
KW - Triple quantum dots
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U2 - 10.1016/j.sse.2009.03.009
DO - 10.1016/j.sse.2009.03.009
M3 - Article
AN - SCOPUS:67349186856
SN - 0038-1101
VL - 53
SP - 779
EP - 785
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 7
ER -