Electron transport through silicon serial triple quantum dots

Gento Yamahata, Yoshishige Tsuchiya, Hiroshi Mizuta, Ken Uchida, Shunri Oda

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We study the electron transport through silicon serial triple quantum dots (TQDs) formed effectively in a lithographically-defined multiple quantum dot system on a silicon-on-insulator substrate at a temperature of 4.2 K. Our serial TQDs are composed of two lithographically-patterned QDs and another one in-between formed by stress during the pattern-dependent oxidation process. The TQDs formation is confirmed by equivalent circuit simulations, which show an excellent agreement with the experimental results. With detailed analysis of the charge configurations in the TQDs, we discuss the distinct properties of the TQDs, including electron transport at the charge quadruple points. In addition, we discuss higher order tunneling processes of the TQDs. The analysis of electron states in the silicon TQDs is a crucial step toward the future implementation of integrated silicon quantum information devices.

Original languageEnglish
Pages (from-to)779-785
Number of pages7
JournalSolid-State Electronics
Volume53
Issue number7
DOIs
Publication statusPublished - 2009 Jul
Externally publishedYes

Fingerprint

Silicon
Semiconductor quantum dots
quantum dots
silicon
electrons
Electron Transport
Circuit simulation
electron states
equivalent circuits
Equivalent circuits
Electron energy levels
insulators
Oxidation
oxidation
Substrates
configurations

Keywords

  • Coulomb blockade
  • Silicon
  • Triple quantum dots

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Yamahata, G., Tsuchiya, Y., Mizuta, H., Uchida, K., & Oda, S. (2009). Electron transport through silicon serial triple quantum dots. Solid-State Electronics, 53(7), 779-785. https://doi.org/10.1016/j.sse.2009.03.009

Electron transport through silicon serial triple quantum dots. / Yamahata, Gento; Tsuchiya, Yoshishige; Mizuta, Hiroshi; Uchida, Ken; Oda, Shunri.

In: Solid-State Electronics, Vol. 53, No. 7, 07.2009, p. 779-785.

Research output: Contribution to journalArticle

Yamahata, G, Tsuchiya, Y, Mizuta, H, Uchida, K & Oda, S 2009, 'Electron transport through silicon serial triple quantum dots', Solid-State Electronics, vol. 53, no. 7, pp. 779-785. https://doi.org/10.1016/j.sse.2009.03.009
Yamahata, Gento ; Tsuchiya, Yoshishige ; Mizuta, Hiroshi ; Uchida, Ken ; Oda, Shunri. / Electron transport through silicon serial triple quantum dots. In: Solid-State Electronics. 2009 ; Vol. 53, No. 7. pp. 779-785.
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