Electron transport through silicon serial triple quantum dots

Gento Yamahata, Yoshishige Tsuchiya, Hiroshi Mizuta, Ken Uchida, Shunri Oda

    Research output: Contribution to journalArticle

    15 Citations (Scopus)

    Abstract

    We study the electron transport through silicon serial triple quantum dots (TQDs) formed effectively in a lithographically-defined multiple quantum dot system on a silicon-on-insulator substrate at a temperature of 4.2 K. Our serial TQDs are composed of two lithographically-patterned QDs and another one in-between formed by stress during the pattern-dependent oxidation process. The TQDs formation is confirmed by equivalent circuit simulations, which show an excellent agreement with the experimental results. With detailed analysis of the charge configurations in the TQDs, we discuss the distinct properties of the TQDs, including electron transport at the charge quadruple points. In addition, we discuss higher order tunneling processes of the TQDs. The analysis of electron states in the silicon TQDs is a crucial step toward the future implementation of integrated silicon quantum information devices.

    Original languageEnglish
    Pages (from-to)779-785
    Number of pages7
    JournalSolid-State Electronics
    Volume53
    Issue number7
    DOIs
    Publication statusPublished - 2009 Jul 1

    Keywords

    • Coulomb blockade
    • Silicon
    • Triple quantum dots

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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    Yamahata, G., Tsuchiya, Y., Mizuta, H., Uchida, K., & Oda, S. (2009). Electron transport through silicon serial triple quantum dots. Solid-State Electronics, 53(7), 779-785. https://doi.org/10.1016/j.sse.2009.03.009