Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures

M. Shima, Y. Sakuma, C. Wirner, T. Strutz, E. Taguchi, T. Futatsugi, Yuji Awano, N. Yokoyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We formed a stacked double TSR quantum dot structure and measured its I-V characteristics. The fine structure related to TSR quantum dots was observed in the low bias region, while negative differential resistances on the order of μA were observed in the higher bias region. The fine structure is well explained by the resonant tunneling through individual TSR quantum dot states.

Original languageEnglish
Title of host publicationProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
EditorsMike Melloch, Mark A. Reed
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages539-542
Number of pages4
ISBN (Print)0780338839, 9780780338838
DOIs
Publication statusPublished - 1997 Jan 1
Externally publishedYes
Event24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States
Duration: 1997 Sep 81997 Sep 11

Other

Other24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
CountryUnited States
CitySan Diego
Period97/9/897/9/11

Fingerprint

Semiconductor quantum dots
Resonant tunneling
Electron Transport

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Shima, M., Sakuma, Y., Wirner, C., Strutz, T., Taguchi, E., Futatsugi, T., ... Yokoyama, N. (1997). Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures. In M. Melloch, & M. A. Reed (Eds.), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 (pp. 539-542). [711734] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.1998.711734

Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures. / Shima, M.; Sakuma, Y.; Wirner, C.; Strutz, T.; Taguchi, E.; Futatsugi, T.; Awano, Yuji; Yokoyama, N.

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. ed. / Mike Melloch; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. p. 539-542 711734.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shima, M, Sakuma, Y, Wirner, C, Strutz, T, Taguchi, E, Futatsugi, T, Awano, Y & Yokoyama, N 1997, Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures. in M Melloch & MA Reed (eds), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997., 711734, Institute of Electrical and Electronics Engineers Inc., pp. 539-542, 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997, San Diego, United States, 97/9/8. https://doi.org/10.1109/ISCS.1998.711734
Shima M, Sakuma Y, Wirner C, Strutz T, Taguchi E, Futatsugi T et al. Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures. In Melloch M, Reed MA, editors, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. Institute of Electrical and Electronics Engineers Inc. 1997. p. 539-542. 711734 https://doi.org/10.1109/ISCS.1998.711734
Shima, M. ; Sakuma, Y. ; Wirner, C. ; Strutz, T. ; Taguchi, E. ; Futatsugi, T. ; Awano, Yuji ; Yokoyama, N. / Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures. Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. editor / Mike Melloch ; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. pp. 539-542
@inproceedings{e0797fe2b2b14e20a472442332cfb74d,
title = "Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures",
abstract = "We formed a stacked double TSR quantum dot structure and measured its I-V characteristics. The fine structure related to TSR quantum dots was observed in the low bias region, while negative differential resistances on the order of μA were observed in the higher bias region. The fine structure is well explained by the resonant tunneling through individual TSR quantum dot states.",
author = "M. Shima and Y. Sakuma and C. Wirner and T. Strutz and E. Taguchi and T. Futatsugi and Yuji Awano and N. Yokoyama",
year = "1997",
month = "1",
day = "1",
doi = "10.1109/ISCS.1998.711734",
language = "English",
isbn = "0780338839",
pages = "539--542",
editor = "Mike Melloch and Reed, {Mark A.}",
booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures

AU - Shima, M.

AU - Sakuma, Y.

AU - Wirner, C.

AU - Strutz, T.

AU - Taguchi, E.

AU - Futatsugi, T.

AU - Awano, Yuji

AU - Yokoyama, N.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - We formed a stacked double TSR quantum dot structure and measured its I-V characteristics. The fine structure related to TSR quantum dots was observed in the low bias region, while negative differential resistances on the order of μA were observed in the higher bias region. The fine structure is well explained by the resonant tunneling through individual TSR quantum dot states.

AB - We formed a stacked double TSR quantum dot structure and measured its I-V characteristics. The fine structure related to TSR quantum dots was observed in the low bias region, while negative differential resistances on the order of μA were observed in the higher bias region. The fine structure is well explained by the resonant tunneling through individual TSR quantum dot states.

UR - http://www.scopus.com/inward/record.url?scp=0344986276&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344986276&partnerID=8YFLogxK

U2 - 10.1109/ISCS.1998.711734

DO - 10.1109/ISCS.1998.711734

M3 - Conference contribution

SN - 0780338839

SN - 9780780338838

SP - 539

EP - 542

BT - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

A2 - Melloch, Mike

A2 - Reed, Mark A.

PB - Institute of Electrical and Electronics Engineers Inc.

ER -