@inproceedings{e0797fe2b2b14e20a472442332cfb74d,
title = "Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures",
abstract = "We formed a stacked double TSR quantum dot structure and measured its I-V characteristics. The fine structure related to TSR quantum dots was observed in the low bias region, while negative differential resistances on the order of μA were observed in the higher bias region. The fine structure is well explained by the resonant tunneling through individual TSR quantum dot states.",
author = "M. Shima and Y. Sakuma and C. Wirner and T. Strutz and E. Taguchi and T. Futatsugi and Y. Awano and N. Yokoyama",
year = "1997",
month = jan,
day = "1",
doi = "10.1109/ISCS.1998.711734",
language = "English",
isbn = "0780338839",
series = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "539--542",
editor = "Mike Melloch and Reed, {Mark A.}",
booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
note = "24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 ; Conference date: 08-09-1997 Through 11-09-1997",
}