Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures

M. Shima, Y. Sakuma, C. Wirner, T. Strutz, E. Taguchi, T. Futatsugi, Y. Awano, N. Yokoyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We formed a stacked double TSR quantum dot structure and measured its I-V characteristics. The fine structure related to TSR quantum dots was observed in the low bias region, while negative differential resistances on the order of μA were observed in the higher bias region. The fine structure is well explained by the resonant tunneling through individual TSR quantum dot states.

Original languageEnglish
Title of host publicationProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
EditorsMike Melloch, Mark A. Reed
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages539-542
Number of pages4
ISBN (Print)0780338839, 9780780338838
DOIs
Publication statusPublished - 1997 Jan 1
Externally publishedYes
Event24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States
Duration: 1997 Sep 81997 Sep 11

Publication series

NameProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Other

Other24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
CountryUnited States
CitySan Diego
Period97/9/897/9/11

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Shima, M., Sakuma, Y., Wirner, C., Strutz, T., Taguchi, E., Futatsugi, T., Awano, Y., & Yokoyama, N. (1997). Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures. In M. Melloch, & M. A. Reed (Eds.), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 (pp. 539-542). [711734] (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.1998.711734