Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures

M. Shima; Y. Sakuma; C. Wirner; T. Strutz; E. Taguchi; T. Futatsugi; Y. Awano; N. Yokoyama

doi:10.1109/ISCS.1998.711734

Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures

M. Shima, Y. Sakuma, C. Wirner, T. Strutz, E. Taguchi, T. Futatsugi, Y. Awano, N. Yokoyama

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We formed a stacked double TSR quantum dot structure and measured its I-V characteristics. The fine structure related to TSR quantum dots was observed in the low bias region, while negative differential resistances on the order of μA were observed in the higher bias region. The fine structure is well explained by the resonant tunneling through individual TSR quantum dot states.

Original language	English
Title of host publication	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
Editors	Mike Melloch, Mark A. Reed
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	539-542
Number of pages	4
ISBN (Print)	0780338839, 9780780338838
DOIs	https://doi.org/10.1109/ISCS.1998.711734
Publication status	Published - 1997 Jan 1
Externally published	Yes
Event	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States Duration: 1997 Sep 8 → 1997 Sep 11

Publication series

Name	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Other

Other	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
Country	United States
City	San Diego
Period	97/9/8 → 97/9/11

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISCS.1998.711734

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Cite this

Shima, M., Sakuma, Y., Wirner, C., Strutz, T., Taguchi, E., Futatsugi, T., Awano, Y., & Yokoyama, N. (1997). Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures. In M. Melloch, & M. A. Reed (Eds.), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 (pp. 539-542). [711734] (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.1998.711734

Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures. / Shima, M.; Sakuma, Y.; Wirner, C.; Strutz, T.; Taguchi, E.; Futatsugi, T.; Awano, Y.; Yokoyama, N.

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. ed. / Mike Melloch; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. p. 539-542 711734 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shima, M, Sakuma, Y, Wirner, C, Strutz, T, Taguchi, E, Futatsugi, T, Awano, Y & Yokoyama, N 1997, Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures. in M Melloch & MA Reed (eds), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997., 711734, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997, Institute of Electrical and Electronics Engineers Inc., pp. 539-542, 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997, San Diego, United States, 97/9/8. https://doi.org/10.1109/ISCS.1998.711734

Shima M, Sakuma Y, Wirner C, Strutz T, Taguchi E, Futatsugi T et al. Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures. In Melloch M, Reed MA, editors, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. Institute of Electrical and Electronics Engineers Inc. 1997. p. 539-542. 711734. (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). https://doi.org/10.1109/ISCS.1998.711734

Shima, M. ; Sakuma, Y. ; Wirner, C. ; Strutz, T. ; Taguchi, E. ; Futatsugi, T. ; Awano, Y. ; Yokoyama, N. / Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures. Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. editor / Mike Melloch ; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. pp. 539-542 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

@inproceedings{e0797fe2b2b14e20a472442332cfb74d,

title = "Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures",

abstract = "We formed a stacked double TSR quantum dot structure and measured its I-V characteristics. The fine structure related to TSR quantum dots was observed in the low bias region, while negative differential resistances on the order of μA were observed in the higher bias region. The fine structure is well explained by the resonant tunneling through individual TSR quantum dot states.",

author = "M. Shima and Y. Sakuma and C. Wirner and T. Strutz and E. Taguchi and T. Futatsugi and Y. Awano and N. Yokoyama",

year = "1997",

month = jan,

day = "1",

doi = "10.1109/ISCS.1998.711734",

language = "English",

isbn = "0780338839",

series = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "539--542",

editor = "Mike Melloch and Reed, {Mark A.}",

booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",

note = "24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 ; Conference date: 08-09-1997 Through 11-09-1997",

}

TY - GEN

T1 - Electron transport through tetrahedral-shaped recess (TSR) stacked double quantum dot structures

AU - Shima, M.

AU - Sakuma, Y.

AU - Wirner, C.

AU - Strutz, T.

AU - Taguchi, E.

AU - Futatsugi, T.

AU - Awano, Y.

AU - Yokoyama, N.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - We formed a stacked double TSR quantum dot structure and measured its I-V characteristics. The fine structure related to TSR quantum dots was observed in the low bias region, while negative differential resistances on the order of μA were observed in the higher bias region. The fine structure is well explained by the resonant tunneling through individual TSR quantum dot states.

AB - We formed a stacked double TSR quantum dot structure and measured its I-V characteristics. The fine structure related to TSR quantum dots was observed in the low bias region, while negative differential resistances on the order of μA were observed in the higher bias region. The fine structure is well explained by the resonant tunneling through individual TSR quantum dot states.

UR - http://www.scopus.com/inward/record.url?scp=0344986276&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344986276&partnerID=8YFLogxK

U2 - 10.1109/ISCS.1998.711734

DO - 10.1109/ISCS.1998.711734

M3 - Conference contribution

AN - SCOPUS:0344986276

SN - 0780338839

SN - 9780780338838

T3 - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

SP - 539

EP - 542

BT - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

A2 - Melloch, Mike

A2 - Reed, Mark A.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997

Y2 - 8 September 1997 through 11 September 1997

ER -