Anomalous etching, caused by the local charging of a patterned wafer surface immersed in a plasma, is one of the obstacles which must be overcome in plasma processing. We have developed a quantitative argument for the potential control of both the fluxes and the velocity components of charged particles on the wafer in a pulsed radio frequency plasma with a short off-cycle in SF6. We have then used relaxation continuum/Boltzmann equation model to create a phase-space model.
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 1998 Jan 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films