Electron transport to a substrate in a radio frequency capacitively coupled plasma by the Boltzmann equation

Jun Matsui, Mari Shibata, Nobuhiko Nakano, Toshiaki Makabe

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Anomalous etching, caused by the local charging of a patterned wafer surface immersed in a plasma, is one of the obstacles which must be overcome in plasma processing. We have developed a quantitative argument for the potential control of both the fluxes and the velocity components of charged particles on the wafer in a pulsed radio frequency plasma with a short off-cycle in SF6. We have then used relaxation continuum/Boltzmann equation model to create a phase-space model.

Original languageEnglish
Pages (from-to)294-299
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume16
Issue number1
Publication statusPublished - 1998 Jan

Fingerprint

Boltzmann equation
radio frequencies
Plasmas
Plasma applications
Substrates
Charged particles
wafers
Etching
electrons
Fluxes
charging
charged particles
etching
continuums
cycles
Electron Transport

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Electron transport to a substrate in a radio frequency capacitively coupled plasma by the Boltzmann equation. / Matsui, Jun; Shibata, Mari; Nakano, Nobuhiko; Makabe, Toshiaki.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 16, No. 1, 01.1998, p. 294-299.

Research output: Contribution to journalArticle

@article{239428c5296e4b93a49b8b696fe9de10,
title = "Electron transport to a substrate in a radio frequency capacitively coupled plasma by the Boltzmann equation",
abstract = "Anomalous etching, caused by the local charging of a patterned wafer surface immersed in a plasma, is one of the obstacles which must be overcome in plasma processing. We have developed a quantitative argument for the potential control of both the fluxes and the velocity components of charged particles on the wafer in a pulsed radio frequency plasma with a short off-cycle in SF6. We have then used relaxation continuum/Boltzmann equation model to create a phase-space model.",
author = "Jun Matsui and Mari Shibata and Nobuhiko Nakano and Toshiaki Makabe",
year = "1998",
month = "1",
language = "English",
volume = "16",
pages = "294--299",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "1",

}

TY - JOUR

T1 - Electron transport to a substrate in a radio frequency capacitively coupled plasma by the Boltzmann equation

AU - Matsui, Jun

AU - Shibata, Mari

AU - Nakano, Nobuhiko

AU - Makabe, Toshiaki

PY - 1998/1

Y1 - 1998/1

N2 - Anomalous etching, caused by the local charging of a patterned wafer surface immersed in a plasma, is one of the obstacles which must be overcome in plasma processing. We have developed a quantitative argument for the potential control of both the fluxes and the velocity components of charged particles on the wafer in a pulsed radio frequency plasma with a short off-cycle in SF6. We have then used relaxation continuum/Boltzmann equation model to create a phase-space model.

AB - Anomalous etching, caused by the local charging of a patterned wafer surface immersed in a plasma, is one of the obstacles which must be overcome in plasma processing. We have developed a quantitative argument for the potential control of both the fluxes and the velocity components of charged particles on the wafer in a pulsed radio frequency plasma with a short off-cycle in SF6. We have then used relaxation continuum/Boltzmann equation model to create a phase-space model.

UR - http://www.scopus.com/inward/record.url?scp=0032354128&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032354128&partnerID=8YFLogxK

M3 - Article

VL - 16

SP - 294

EP - 299

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 1

ER -