Electron transport to a substrate in a radio frequency capacitively coupled plasma by the Boltzmann equation

Jun Matsui, Mari Shibata, Nobuhiko Nakano, Toshiaki Makabe

Research output: Contribution to journalArticle

13 Citations (Scopus)


Anomalous etching, caused by the local charging of a patterned wafer surface immersed in a plasma, is one of the obstacles which must be overcome in plasma processing. We have developed a quantitative argument for the potential control of both the fluxes and the velocity components of charged particles on the wafer in a pulsed radio frequency plasma with a short off-cycle in SF6. We have then used relaxation continuum/Boltzmann equation model to create a phase-space model.

Original languageEnglish
Pages (from-to)294-299
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number1
Publication statusPublished - 1998 Jan 1


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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