Abstract
Anomalous etching, caused by the local charging of a patterned wafer surface immersed in a plasma, is one of the obstacles which must be overcome in plasma processing. We have developed a quantitative argument for the potential control of both the fluxes and the velocity components of charged particles on the wafer in a pulsed radio frequency plasma with a short off-cycle in SF6. We have then used relaxation continuum/Boltzmann equation model to create a phase-space model.
| Original language | English |
|---|---|
| Pages (from-to) | 294-299 |
| Number of pages | 6 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 16 |
| Issue number | 1 |
| Publication status | Published - 1998 Jan |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Physics and Astronomy (miscellaneous)
- Surfaces and Interfaces
Cite this
Electron transport to a substrate in a radio frequency capacitively coupled plasma by the Boltzmann equation. / Matsui, Jun; Shibata, Mari; Nakano, Nobuhiko; Makabe, Toshiaki.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 16, No. 1, 01.1998, p. 294-299.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electron transport to a substrate in a radio frequency capacitively coupled plasma by the Boltzmann equation
AU - Matsui, Jun
AU - Shibata, Mari
AU - Nakano, Nobuhiko
AU - Makabe, Toshiaki
PY - 1998/1
Y1 - 1998/1
N2 - Anomalous etching, caused by the local charging of a patterned wafer surface immersed in a plasma, is one of the obstacles which must be overcome in plasma processing. We have developed a quantitative argument for the potential control of both the fluxes and the velocity components of charged particles on the wafer in a pulsed radio frequency plasma with a short off-cycle in SF6. We have then used relaxation continuum/Boltzmann equation model to create a phase-space model.
AB - Anomalous etching, caused by the local charging of a patterned wafer surface immersed in a plasma, is one of the obstacles which must be overcome in plasma processing. We have developed a quantitative argument for the potential control of both the fluxes and the velocity components of charged particles on the wafer in a pulsed radio frequency plasma with a short off-cycle in SF6. We have then used relaxation continuum/Boltzmann equation model to create a phase-space model.
UR - http://www.scopus.com/inward/record.url?scp=0032354128&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032354128&partnerID=8YFLogxK
M3 - Article
VL - 16
SP - 294
EP - 299
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 1
ER -