Electron transport to a substrate in a radio frequency capacitively coupled plasma by the Boltzmann equation

Jun Matsui; Mari Shibata; Nobuhiko Nakano; Toshiaki Makabe

doi:10.1116/1.580985

Electron transport to a substrate in a radio frequency capacitively coupled plasma by the Boltzmann equation

Jun Matsui, Mari Shibata, Nobuhiko Nakano, Toshiaki Makabe

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13 Citations (Scopus)

Abstract

Anomalous etching, caused by the local charging of a patterned wafer surface immersed in a plasma, is one of the obstacles which must be overcome in plasma processing. We have developed a quantitative argument for the potential control of both the fluxes and the velocity components of charged particles on the wafer in a pulsed radio frequency plasma with a short off-cycle in SF₆. We have then used relaxation continuum/Boltzmann equation model to create a phase-space model.

Original language	English
Pages (from-to)	294-299
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	16
Issue number	1
DOIs	https://doi.org/10.1116/1.580985
Publication status	Published - 1998 Jan 1

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ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Cite this

Matsui, J., Shibata, M., Nakano, N., & Makabe, T. (1998). Electron transport to a substrate in a radio frequency capacitively coupled plasma by the Boltzmann equation. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 16(1), 294-299. https://doi.org/10.1116/1.580985

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10.1116/1.580985