Abstract
Anomalous etching, caused by the local charging of a patterned wafer surface immersed in a plasma, is one of the obstacles which must be overcome in plasma processing. We have developed a quantitative argument for the potential control of both the fluxes and the velocity components of charged particles on the wafer in a pulsed radio frequency plasma with a short off-cycle in SF6. We have then used relaxation continuum/Boltzmann equation model to create a phase-space model.
Original language | English |
---|---|
Pages (from-to) | 294-299 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 16 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1998 Jan 1 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films