Electronic properties of Cs-atom doped aluminum and silicon clusters: AlnCsm and SinCsm

Kiichirou Koyasu; Minoru Akutsu; Junko Atobe; Masaaki Mitsui; Atsushi Nakajima

doi:10.1016/j.cplett.2006.01.118

Electronic properties of Cs-atom doped aluminum and silicon clusters: Al_nCs_m and Si_nCs_m

Kiichirou Koyasu, Minoru Akutsu, Junko Atobe, Masaaki Mitsui, Atsushi Nakajima

Department of Chemistry

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Abstract

The effect of Cs atom doping on metallic aluminum clusters and covalent silicon clusters, Al_nCs_m (n = 5-14, m = 0-3) and Si_nCs_m (n = 5-16, m = 0-3), was examined by mass spectrometry and anion photoelectron spectroscopy. For clusters containing Cs atom(s), the electron affinities of both clusters are generally decreased and the following characteristic features are observed: for Al_nCs_m, Cs-atom doping causes (1) electron filling into the electronic shell structure of the Al_n clusters and (2) geometrical packing of icosahedral 13-atoms, while for Si_nCs_m Cs-atom doping enhances electronic stability to be ascribed to pure Si_n clusters, particularly at (n, m) = (10, 3) and (13, 1).

Original language	English
Pages (from-to)	534-539
Number of pages	6
Journal	Chemical Physics Letters
Volume	421
Issue number	4-6
DOIs	https://doi.org/10.1016/j.cplett.2006.01.118
Publication status	Published - 2006 Apr 15

ASJC Scopus subject areas

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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title = "Electronic properties of Cs-atom doped aluminum and silicon clusters: AlnCsm and SinCsm",

abstract = "The effect of Cs atom doping on metallic aluminum clusters and covalent silicon clusters, AlnCsm (n = 5-14, m = 0-3) and SinCsm (n = 5-16, m = 0-3), was examined by mass spectrometry and anion photoelectron spectroscopy. For clusters containing Cs atom(s), the electron affinities of both clusters are generally decreased and the following characteristic features are observed: for AlnCsm, Cs-atom doping causes (1) electron filling into the electronic shell structure of the Aln clusters and (2) geometrical packing of icosahedral 13-atoms, while for SinCsm Cs-atom doping enhances electronic stability to be ascribed to pure Sin clusters, particularly at (n, m) = (10, 3) and (13, 1).",

author = "Kiichirou Koyasu and Minoru Akutsu and Junko Atobe and Masaaki Mitsui and Atsushi Nakajima",

note = "Funding Information: This work is partly supported by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Grant-in-Aid for the 21st Century COE program {\textquoteleft}KEIO LCC{\textquoteright}, for scientific research for (C) (No. 15550129). K.K. is grateful to Research Fellowship of the JSPS for Young Scientists.",

year = "2006",

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day = "15",

doi = "10.1016/j.cplett.2006.01.118",

language = "English",

volume = "421",

pages = "534--539",

journal = "Chemical Physics Letters",

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T1 - Electronic properties of Cs-atom doped aluminum and silicon clusters

T2 - AlnCsm and SinCsm

AU - Koyasu, Kiichirou

AU - Akutsu, Minoru

AU - Atobe, Junko

AU - Mitsui, Masaaki

AU - Nakajima, Atsushi

N1 - Funding Information: This work is partly supported by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Grant-in-Aid for the 21st Century COE program ‘KEIO LCC’, for scientific research for (C) (No. 15550129). K.K. is grateful to Research Fellowship of the JSPS for Young Scientists.

PY - 2006/4/15

Y1 - 2006/4/15

N2 - The effect of Cs atom doping on metallic aluminum clusters and covalent silicon clusters, AlnCsm (n = 5-14, m = 0-3) and SinCsm (n = 5-16, m = 0-3), was examined by mass spectrometry and anion photoelectron spectroscopy. For clusters containing Cs atom(s), the electron affinities of both clusters are generally decreased and the following characteristic features are observed: for AlnCsm, Cs-atom doping causes (1) electron filling into the electronic shell structure of the Aln clusters and (2) geometrical packing of icosahedral 13-atoms, while for SinCsm Cs-atom doping enhances electronic stability to be ascribed to pure Sin clusters, particularly at (n, m) = (10, 3) and (13, 1).

AB - The effect of Cs atom doping on metallic aluminum clusters and covalent silicon clusters, AlnCsm (n = 5-14, m = 0-3) and SinCsm (n = 5-16, m = 0-3), was examined by mass spectrometry and anion photoelectron spectroscopy. For clusters containing Cs atom(s), the electron affinities of both clusters are generally decreased and the following characteristic features are observed: for AlnCsm, Cs-atom doping causes (1) electron filling into the electronic shell structure of the Aln clusters and (2) geometrical packing of icosahedral 13-atoms, while for SinCsm Cs-atom doping enhances electronic stability to be ascribed to pure Sin clusters, particularly at (n, m) = (10, 3) and (13, 1).

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JO - Chemical Physics Letters

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Electronic properties of Cs-atom doped aluminum and silicon clusters: Al_nCs_m and Si_nCs_m

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