Electronic properties of Cs-atom doped aluminum and silicon clusters: AlnCsm and SinCsm

Kiichirou Koyasu, Minoru Akutsu, Junko Atobe, Masaaki Mitsui, Atsushi Nakajima

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26 Citations (Scopus)

Abstract

The effect of Cs atom doping on metallic aluminum clusters and covalent silicon clusters, AlnCsm (n = 5-14, m = 0-3) and SinCsm (n = 5-16, m = 0-3), was examined by mass spectrometry and anion photoelectron spectroscopy. For clusters containing Cs atom(s), the electron affinities of both clusters are generally decreased and the following characteristic features are observed: for AlnCsm, Cs-atom doping causes (1) electron filling into the electronic shell structure of the Aln clusters and (2) geometrical packing of icosahedral 13-atoms, while for SinCsm Cs-atom doping enhances electronic stability to be ascribed to pure Sin clusters, particularly at (n, m) = (10, 3) and (13, 1).

Original languageEnglish
Pages (from-to)534-539
Number of pages6
JournalChemical Physics Letters
Volume421
Issue number4-6
DOIs
Publication statusPublished - 2006 Apr 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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