Electronic properties of Si and Ge atoms doped in clusters

In nSim and innGem

Minora Akutsu, Kiichirou Koyasu, Junko Atobe, Ken Miyajima, Masaaki Mitsui, Atsushi Nakajima

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Electronic properties of silicon and germanium atom doped indium clusters, InnSim and InnGem, were investigated by photoionization spectroscopy of the neutrals and photoelectron spectroscopy of the anions. Size dependence of ionization energy and electron affinity for InnSi1 and InnGe1 exhibit pronounced even-odd alternation at cluster sizes of n = 10-16, as compared to those for pure Inn clusters. This result shows that symmetry lowering with the doped atom of Si or Ge results in undegeneration of electronic states in the Id shell formed by monovalent In atoms.

Original languageEnglish
Pages (from-to)573-577
Number of pages5
JournalJournal of Physical Chemistry A
Volume111
Issue number4
DOIs
Publication statusPublished - 2007 Feb 1

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Electronic properties
Atoms
electronics
Germanium
atoms
Electron affinity
Photoionization
Indium
Ionization potential
alternations
Electronic states
Silicon
Photoelectron spectroscopy
electron affinity
spectroscopy
Anions
indium
affinity
photoionization
germanium

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Electronic properties of Si and Ge atoms doped in clusters : In nSim and innGem. / Akutsu, Minora; Koyasu, Kiichirou; Atobe, Junko; Miyajima, Ken; Mitsui, Masaaki; Nakajima, Atsushi.

In: Journal of Physical Chemistry A, Vol. 111, No. 4, 01.02.2007, p. 573-577.

Research output: Contribution to journalArticle

Akutsu, Minora ; Koyasu, Kiichirou ; Atobe, Junko ; Miyajima, Ken ; Mitsui, Masaaki ; Nakajima, Atsushi. / Electronic properties of Si and Ge atoms doped in clusters : In nSim and innGem. In: Journal of Physical Chemistry A. 2007 ; Vol. 111, No. 4. pp. 573-577.
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