Electronic properties of Si and Ge atoms doped in clusters: In _nSi_m and in_nGe_m

Electronic properties of silicon and germanium atom doped indium clusters, In_nSi_m and In_nGe_m, were investigated by photoionization spectroscopy of the neutrals and photoelectron spectroscopy of the anions. Size dependence of ionization energy and electron affinity for In_nSi₁ and In_nGe₁ exhibit pronounced even-odd alternation at cluster sizes of n = 10-16, as compared to those for pure In_n clusters. This result shows that symmetry lowering with the doped atom of Si or Ge results in undegeneration of electronic states in the Id shell formed by monovalent In atoms.