Electronic properties of silicon - M binary clusters (M = C & Na)

Atsushi Nakajima, K. Nakao, M. Gomei, R. Kishi, S. Iwata, K. Kaya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Through photoelectron spectroscopic or photoionization, electronic properties of silicon-carbon and silicon-sodium binary clusters, produced by laser vaporization were investigated. The ionization energies (Ei) of the SinNam clusters were determined from the threshold energy of their ionization efficiency curves. The clear parallelism between the ionization energy of SinNa and the electron affinity (EA) of Sin is found; there are three local minima at n=4, 7 and 10. Results of ab initio calculation show that the Na atom is bound by two Si atoms at n=4-6, whereas it is bound by one Si atom at n=7.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages61-66
Number of pages6
Volume358
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: 1994 Nov 281994 Nov 30

Other

OtherProceedings of the 1994 MRS Fall Meeting
CityBoston, MA, USA
Period94/11/2894/11/30

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Nakajima, A., Nakao, K., Gomei, M., Kishi, R., Iwata, S., & Kaya, K. (1995). Electronic properties of silicon - M binary clusters (M = C & Na). In Materials Research Society Symposium - Proceedings (Vol. 358, pp. 61-66). Materials Research Society.