Electronic properties of silicon - M binary clusters (M = C & Na)

A. Nakajima, K. Nakao, M. Gomei, R. Kishi, S. Iwata, K. Kaya

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Through photoelectron spectroscopic or photoionization, electronic properties of silicon-carbon and silicon-sodium binary clusters, produced by laser vaporization were investigated. The ionization energies (Ei) of the SinNam clusters were determined from the threshold energy of their ionization efficiency curves. The clear parallelism between the ionization energy of SinNa and the electron affinity (EA) of Sin is found; there are three local minima at n=4, 7 and 10. Results of ab initio calculation show that the Na atom is bound by two Si atoms at n=4-6, whereas it is bound by one Si atom at n=7.

Original languageEnglish
Pages (from-to)61-66
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume358
Publication statusPublished - 1995 Jan 1
Externally publishedYes
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: 1994 Nov 281994 Nov 30

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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