Electronic States and Transport Phenomena in Quantum Dot Systems

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Electronic states and transport phenomena in semiconductor quantum dots are studied theoretically. Taking account of the electron-electron Coulomb interaction by the exact diagonalization method, the ground state and low-lying excited states are calculated as functions of magnetic field. Using the obtained many-body states, we discuss the temperature dependence of the conductance peaks in the Coulomb oscillation. In the Coulomb blockade region, elastic and inelastic cotunneling currents are evaluated under finite bias voltages. The cotunneling conductance is markedly enhanced by the Kondo effect. In coupled quantum dots, molecular Orbitals and electronic correlation influence the transport properties.

Original languageEnglish
Pages (from-to)1929-1935
Number of pages7
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number3 B
Publication statusPublished - 2001

Fingerprint

Electronic states
Semiconductor quantum dots
quantum dots
Kondo effect
Coulomb blockade
Molecular electronics
Electrons
molecular electronics
Molecular orbitals
Bias voltage
Coulomb interactions
electronics
Excited states
Transport properties
Ground state
molecular orbitals
electrons
transport properties
Magnetic fields
temperature dependence

Keywords

  • Artificial atom
  • Cotunneling
  • Coulomb blockade
  • Coulomb oscillation
  • Electronic correlation
  • Exact diagonalization
  • Kondo effect
  • Quantum dot

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electronic States and Transport Phenomena in Quantum Dot Systems. / Eto, Mikio.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 3 B, 2001, p. 1929-1935.

Research output: Contribution to journalArticle

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