Electronic structure and efficient carrier injection in low-threshold T-shaped quantum-wire lasers with parallel p - And n -doping layers

Shu Man Liu, Masahiro Yoshita, Makoto Okano, Toshiyuki Ihara, Hirotake Itoh, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West, Kirk W. Baldwin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report on the electronic structure, efficient carrier injection, and quantitative lasing characteristics of T-shaped GaAs/AlGaAs quantum-wire-laser diodes with parallel p - and n -doping layers grown by a cleaved-edge-overgrowth method with molecular-beam epitaxy. Continuous single-mode lasing from the ground subband of the quantum wires was demonstrated between 30 and 70 K in laser diodes with high-reflectivity Au coating on both cavity facets. The lowest threshold of 0.27 mA and the highest differential quantum efficiency of 12% were achieved at 30 K. Micro-photoluminescence measurements demonstrated the high optical quality of the quantum wires with narrow linewidth of 0.9 meV and provided electronic structures of surrounding layers. Microscopic electroluminescence (EL) imaging measurements demonstrated the efficient carrier injection into the quantum wires at 30 K. These two factors, i.e., high material quality and efficient carrier injection, contribute to the low threshold current and high efficiency of the laser device. The result of EL imaging at 5 K indicates an inefficient carrier injection into the active region, which limits the operating temperature of the devices.

Original languageEnglish
Article number043108
JournalJournal of Applied Physics
Volume102
Issue number4
DOIs
Publication statusPublished - 2007
Externally publishedYes

Fingerprint

carrier injection
quantum wires
electronic structure
thresholds
electroluminescence
lasers
lasing
semiconductor lasers
operating temperature
threshold currents
aluminum gallium arsenides
quantum efficiency
flat surfaces
molecular beam epitaxy
reflectance
photoluminescence
coatings
cavities

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Electronic structure and efficient carrier injection in low-threshold T-shaped quantum-wire lasers with parallel p - And n -doping layers. / Liu, Shu Man; Yoshita, Masahiro; Okano, Makoto; Ihara, Toshiyuki; Itoh, Hirotake; Akiyama, Hidefumi; Pfeiffer, Loren N.; West, Ken W.; Baldwin, Kirk W.

In: Journal of Applied Physics, Vol. 102, No. 4, 043108, 2007.

Research output: Contribution to journalArticle

Liu, Shu Man ; Yoshita, Masahiro ; Okano, Makoto ; Ihara, Toshiyuki ; Itoh, Hirotake ; Akiyama, Hidefumi ; Pfeiffer, Loren N. ; West, Ken W. ; Baldwin, Kirk W. / Electronic structure and efficient carrier injection in low-threshold T-shaped quantum-wire lasers with parallel p - And n -doping layers. In: Journal of Applied Physics. 2007 ; Vol. 102, No. 4.
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AU - Ihara, Toshiyuki

AU - Itoh, Hirotake

AU - Akiyama, Hidefumi

AU - Pfeiffer, Loren N.

AU - West, Ken W.

AU - Baldwin, Kirk W.

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