Electronic Structure of Al2O3 Thin Film Studied Using First-Principle Band Calculation

Kazuo Shiiki, Masaaki Igarashi, Hideo Kaijyu

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The electronic structures of Al2O3 thin film are calculated within the framework of the local density approximation using the full-potential-linearized augmented-plane-wave method, for comparison to those of the bulk. The band gap of Al2O3 thin film is about 2.6 eV, which is much smaller than that of the bulk (∼6.6eV). It is found that Al2O3 thin film is not a good insulator.

Original languageEnglish
Pages (from-to)5185-5186
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number8
Publication statusPublished - 2003 Aug


  • AlO
  • Band calculation
  • Tunneling junction

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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