The electronic structures of Al2O3 thin film are calculated within the framework of the local density approximation using the full-potential-linearized augmented-plane-wave method, for comparison to those of the bulk. The band gap of Al2O3 thin film is about 2.6 eV, which is much smaller than that of the bulk (∼6.6eV). It is found that Al2O3 thin film is not a good insulator.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 2003 Aug|
- Band calculation
- Tunneling junction
ASJC Scopus subject areas
- Physics and Astronomy(all)