Electronic Structure of Al2O3 Thin Film Studied Using First-Principle Band Calculation

Kazuo Shiiki, Masaaki Igarashi, Hideo Kaiju

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The electronic structures of Al2O3 thin film are calculated within the framework of the local density approximation using the full-potential-linearized augmented-plane-wave method, for comparison to those of the bulk. The band gap of Al2O3 thin film is about 2.6 eV, which is much smaller than that of the bulk (∼6.6eV). It is found that Al2O3 thin film is not a good insulator.

Original languageEnglish
Pages (from-to)5185-5186
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number8
Publication statusPublished - 2003 Aug 1

Fingerprint

Electronic structure
electronic structure
Thin films
thin films
Local density approximation
Energy gap
plane waves
insulators
approximation

Keywords

  • AlO
  • Band calculation
  • Tunneling junction

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Electronic Structure of Al2O3 Thin Film Studied Using First-Principle Band Calculation. / Shiiki, Kazuo; Igarashi, Masaaki; Kaiju, Hideo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 8, 01.08.2003, p. 5185-5186.

Research output: Contribution to journalArticle

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