Electronic Structure of Al2O3 Thin Film Studied Using First-Principle Band Calculation

Kazuo Shiiki; Masaaki Igarashi; Hideo Kaijyu

doi:10.1143/jjap.42.5185

Electronic Structure of Al₂O₃ Thin Film Studied Using First-Principle Band Calculation

Kazuo Shiiki, Masaaki Igarashi, Hideo Kaijyu

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The electronic structures of Al₂O₃ thin film are calculated within the framework of the local density approximation using the full-potential-linearized augmented-plane-wave method, for comparison to those of the bulk. The band gap of Al₂O₃ thin film is about 2.6 eV, which is much smaller than that of the bulk (∼6.6eV). It is found that Al₂O₃ thin film is not a good insulator.

Original language	English
Pages (from-to)	5185-5186
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	8
DOIs	https://doi.org/10.1143/jjap.42.5185
Publication status	Published - 2003 Aug

Keywords

AlO
Band calculation
Tunneling junction

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.42.5185

Cite this

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abstract = "The electronic structures of Al2O3 thin film are calculated within the framework of the local density approximation using the full-potential-linearized augmented-plane-wave method, for comparison to those of the bulk. The band gap of Al2O3 thin film is about 2.6 eV, which is much smaller than that of the bulk (∼6.6eV). It is found that Al2O3 thin film is not a good insulator.",

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N2 - The electronic structures of Al2O3 thin film are calculated within the framework of the local density approximation using the full-potential-linearized augmented-plane-wave method, for comparison to those of the bulk. The band gap of Al2O3 thin film is about 2.6 eV, which is much smaller than that of the bulk (∼6.6eV). It is found that Al2O3 thin film is not a good insulator.

AB - The electronic structures of Al2O3 thin film are calculated within the framework of the local density approximation using the full-potential-linearized augmented-plane-wave method, for comparison to those of the bulk. The band gap of Al2O3 thin film is about 2.6 eV, which is much smaller than that of the bulk (∼6.6eV). It is found that Al2O3 thin film is not a good insulator.

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