Electronic Structure of Al2O3 Thin Film Studied Using First-Principle Band Calculation

Kazuo Shiiki, Masaaki Igarashi, Hideo Kaijyu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The electronic structures of Al2O3 thin film are calculated within the framework of the local density approximation using the full-potential-linearized augmented-plane-wave method, for comparison to those of the bulk. The band gap of Al2O3 thin film is about 2.6 eV, which is much smaller than that of the bulk (∼6.6eV). It is found that Al2O3 thin film is not a good insulator.

Original languageEnglish
Pages (from-to)5185-5186
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number8
DOIs
Publication statusPublished - 2003 Aug

Keywords

  • AlO
  • Band calculation
  • Tunneling junction

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Electronic Structure of Al<sub>2</sub>O<sub>3</sub> Thin Film Studied Using First-Principle Band Calculation'. Together they form a unique fingerprint.

Cite this