Electronic structure of hydrogen-terminated silicon surfaces [H-Si(111)] studied by two-photon photoemission

Tsuneyuki Nakamura, Ken Miyajima, Naoyuki Hirata, Takeshi Matsumoto, Yoshitada Morikawa, Hirokazu Tada, Atsushi Nakajima

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9 Citations (Scopus)


The surface and bulk electronic states of hydrogen-terminated Si(111)-(1 × 1) [H-Si(111)] were studied by two-photon photoemission (2PPE) spectroscopy. With the polarization and emission-angle dependence of the 2PPE spectra, five series of electronic structures for H-Si(111) can be identified as A, B, C, D, and E in the 2PPE spectra by fine tuning the exciting photon energy, hv, from 4.23 to 4.90 eV. For hv < 4.6 eV, peak A arises from a surface resonance at a 1.01 eV from EF, and at the photon energy higher than 4.6 eV, peak A indicates photoemission from an intermediate state, corresponding to an image-potential state at 3.61 eV from EF. Other structures, B, C, and D arise from bulk states, while structure E occurs from an electronhole excitation process. This work has revealed the surface resonance and the image-potential state on H-Si(111) for the first time.

Original languageEnglish
Pages (from-to)735-743
Number of pages9
JournalApplied Physics A: Materials Science and Processing
Issue number4
Publication statusPublished - 2010 Mar

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)


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