Electronic structure of octane on Cu(1 1 1) and Ni(1 1 1) studied by near edge X-ray absorption fine structure

Manabu Kiguchi, Shiro Entani, Susumu Ikeda, Genki Yoshikawa, Ikuyo Nakai, Hiroshi Kondoh, Toshiaki Ohta, Koichiro Saiki

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The electronic structure of an octane film grown on Cu(1 1 1) and Ni(1 1 1) was studied using C K-edge near edge X-ray absorption fine structure (NEXAFS). A pre-peak was observed on the bulk edge onset for the 1 ML thick octane films on the metal substrates. The pre-peak originated from metal induced gap states (MIGS) in the band gap of octane. The intensity of the pre-peak for octane/Ni(1 1 1) was the same as that of octane/Cu(1 1 1), suggesting that there was little difference in the density of unoccupied MIGS between the octane film on Ni(1 1 1) and Cu(1 1 1). We discuss the metal dependence of the density of unoccupied MIGS on the band structure of the metals.

Original languageEnglish
Pages (from-to)4074-4077
Number of pages4
JournalSurface Science
Volume601
Issue number18
DOIs
Publication statusPublished - 2007 Sep 15
Externally publishedYes

Fingerprint

X ray absorption
octanes
Electronic structure
Metals
fine structure
electronic structure
metals
x rays
Band structure
octane
Energy gap
Substrates

Keywords

  • Alkanes
  • Copper
  • Near edge extended X-ray absorption fine structure
  • Nickel
  • Surface electronic phenomena

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Electronic structure of octane on Cu(1 1 1) and Ni(1 1 1) studied by near edge X-ray absorption fine structure. / Kiguchi, Manabu; Entani, Shiro; Ikeda, Susumu; Yoshikawa, Genki; Nakai, Ikuyo; Kondoh, Hiroshi; Ohta, Toshiaki; Saiki, Koichiro.

In: Surface Science, Vol. 601, No. 18, 15.09.2007, p. 4074-4077.

Research output: Contribution to journalArticle

Kiguchi, M, Entani, S, Ikeda, S, Yoshikawa, G, Nakai, I, Kondoh, H, Ohta, T & Saiki, K 2007, 'Electronic structure of octane on Cu(1 1 1) and Ni(1 1 1) studied by near edge X-ray absorption fine structure', Surface Science, vol. 601, no. 18, pp. 4074-4077. https://doi.org/10.1016/j.susc.2007.04.055
Kiguchi, Manabu ; Entani, Shiro ; Ikeda, Susumu ; Yoshikawa, Genki ; Nakai, Ikuyo ; Kondoh, Hiroshi ; Ohta, Toshiaki ; Saiki, Koichiro. / Electronic structure of octane on Cu(1 1 1) and Ni(1 1 1) studied by near edge X-ray absorption fine structure. In: Surface Science. 2007 ; Vol. 601, No. 18. pp. 4074-4077.
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AU - Yoshikawa, Genki

AU - Nakai, Ikuyo

AU - Kondoh, Hiroshi

AU - Ohta, Toshiaki

AU - Saiki, Koichiro

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AB - The electronic structure of an octane film grown on Cu(1 1 1) and Ni(1 1 1) was studied using C K-edge near edge X-ray absorption fine structure (NEXAFS). A pre-peak was observed on the bulk edge onset for the 1 ML thick octane films on the metal substrates. The pre-peak originated from metal induced gap states (MIGS) in the band gap of octane. The intensity of the pre-peak for octane/Ni(1 1 1) was the same as that of octane/Cu(1 1 1), suggesting that there was little difference in the density of unoccupied MIGS between the octane film on Ni(1 1 1) and Cu(1 1 1). We discuss the metal dependence of the density of unoccupied MIGS on the band structure of the metals.

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