Electronic structure of octane on Cu(1 1 1) and Ni(1 1 1) studied by near edge X-ray absorption fine structure

Manabu Kiguchi, Shiro Entani, Susumu Ikeda, Genki Yoshikawa, Ikuyo Nakai, Hiroshi Kondoh, Toshiaki Ohta, Koichiro Saiki

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The electronic structure of an octane film grown on Cu(1 1 1) and Ni(1 1 1) was studied using C K-edge near edge X-ray absorption fine structure (NEXAFS). A pre-peak was observed on the bulk edge onset for the 1 ML thick octane films on the metal substrates. The pre-peak originated from metal induced gap states (MIGS) in the band gap of octane. The intensity of the pre-peak for octane/Ni(1 1 1) was the same as that of octane/Cu(1 1 1), suggesting that there was little difference in the density of unoccupied MIGS between the octane film on Ni(1 1 1) and Cu(1 1 1). We discuss the metal dependence of the density of unoccupied MIGS on the band structure of the metals.

Original languageEnglish
Pages (from-to)4074-4077
Number of pages4
JournalSurface Science
Issue number18
Publication statusPublished - 2007 Sep 15
Externally publishedYes



  • Alkanes
  • Copper
  • Near edge extended X-ray absorption fine structure
  • Nickel
  • Surface electronic phenomena

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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