Abstract
The electronic structure of an octane film grown on Cu(1 1 1) and Ni(1 1 1) was studied using C K-edge near edge X-ray absorption fine structure (NEXAFS). A pre-peak was observed on the bulk edge onset for the 1 ML thick octane films on the metal substrates. The pre-peak originated from metal induced gap states (MIGS) in the band gap of octane. The intensity of the pre-peak for octane/Ni(1 1 1) was the same as that of octane/Cu(1 1 1), suggesting that there was little difference in the density of unoccupied MIGS between the octane film on Ni(1 1 1) and Cu(1 1 1). We discuss the metal dependence of the density of unoccupied MIGS on the band structure of the metals.
Original language | English |
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Pages (from-to) | 4074-4077 |
Number of pages | 4 |
Journal | Surface Science |
Volume | 601 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2007 Sept 15 |
Externally published | Yes |
Keywords
- Alkanes
- Copper
- Near edge extended X-ray absorption fine structure
- Nickel
- Surface electronic phenomena
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry