Electronic transport properties of Si thin film from bulk to sub-nm thickness: A first-principles study

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To investigate transport properties of the channel region in silicon on insulator (SOI), we studied the electronic structure of hydrogen-terminated Si(001) and (111) slab models by the density functional theory. It is found that the electronic properties are almost the same for those of the bulk around 30nm thickness and deviate from the naive effective mass approximation theory in the range thinner than 2nm. The effective mass of the 〈 001 〉 confined model is almost constant and equals to the bulk one throughout the calculated range(0.7-35nm). However, the mass of the 〈 111 〉 confined model strongly depends on the layer thickness.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages83-84
Number of pages2
DOIs
Publication statusPublished - 2005 Jun 30
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 2004 Jul 262004 Jul 30

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period04/7/2604/7/30

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Yamauchi, J. (2005). Electronic transport properties of Si thin film from bulk to sub-nm thickness: A first-principles study. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 83-84). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994005