Electronic transport properties of Si thin film from bulk to sub-nm thickness

A first-principles study

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To investigate transport properties of the channel region in silicon on insulator (SOI), we studied the electronic structure of hydrogen-terminated Si(001) and (111) slab models by the density functional theory. It is found that the electronic properties are almost the same for those of the bulk around 30nm thickness and deviate from the naive effective mass approximation theory in the range thinner than 2nm. The effective mass of the 〈 001 〉 confined model is almost constant and equals to the bulk one throughout the calculated range(0.7-35nm). However, the mass of the 〈 111 〉 confined model strongly depends on the layer thickness.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages83-84
Number of pages2
Volume772
DOIs
Publication statusPublished - 2005 Jun 30
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 2004 Jul 262004 Jul 30

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period04/7/2604/7/30

Fingerprint

transport properties
thin films
electronics
slabs
insulators
density functional theory
electronic structure
silicon
hydrogen
approximation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electronic transport properties of Si thin film from bulk to sub-nm thickness : A first-principles study. / Yamauchi, Jun.

AIP Conference Proceedings. Vol. 772 2005. p. 83-84.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamauchi, J 2005, Electronic transport properties of Si thin film from bulk to sub-nm thickness: A first-principles study. in AIP Conference Proceedings. vol. 772, pp. 83-84, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 04/7/26. https://doi.org/10.1063/1.1994005
@inproceedings{329464175d4d4c3e964a77b184cb35d9,
title = "Electronic transport properties of Si thin film from bulk to sub-nm thickness: A first-principles study",
abstract = "To investigate transport properties of the channel region in silicon on insulator (SOI), we studied the electronic structure of hydrogen-terminated Si(001) and (111) slab models by the density functional theory. It is found that the electronic properties are almost the same for those of the bulk around 30nm thickness and deviate from the naive effective mass approximation theory in the range thinner than 2nm. The effective mass of the 〈 001 〉 confined model is almost constant and equals to the bulk one throughout the calculated range(0.7-35nm). However, the mass of the 〈 111 〉 confined model strongly depends on the layer thickness.",
author = "Jun Yamauchi",
year = "2005",
month = "6",
day = "30",
doi = "10.1063/1.1994005",
language = "English",
isbn = "0735402574",
volume = "772",
pages = "83--84",
booktitle = "AIP Conference Proceedings",

}

TY - GEN

T1 - Electronic transport properties of Si thin film from bulk to sub-nm thickness

T2 - A first-principles study

AU - Yamauchi, Jun

PY - 2005/6/30

Y1 - 2005/6/30

N2 - To investigate transport properties of the channel region in silicon on insulator (SOI), we studied the electronic structure of hydrogen-terminated Si(001) and (111) slab models by the density functional theory. It is found that the electronic properties are almost the same for those of the bulk around 30nm thickness and deviate from the naive effective mass approximation theory in the range thinner than 2nm. The effective mass of the 〈 001 〉 confined model is almost constant and equals to the bulk one throughout the calculated range(0.7-35nm). However, the mass of the 〈 111 〉 confined model strongly depends on the layer thickness.

AB - To investigate transport properties of the channel region in silicon on insulator (SOI), we studied the electronic structure of hydrogen-terminated Si(001) and (111) slab models by the density functional theory. It is found that the electronic properties are almost the same for those of the bulk around 30nm thickness and deviate from the naive effective mass approximation theory in the range thinner than 2nm. The effective mass of the 〈 001 〉 confined model is almost constant and equals to the bulk one throughout the calculated range(0.7-35nm). However, the mass of the 〈 111 〉 confined model strongly depends on the layer thickness.

UR - http://www.scopus.com/inward/record.url?scp=33749491580&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749491580&partnerID=8YFLogxK

U2 - 10.1063/1.1994005

DO - 10.1063/1.1994005

M3 - Conference contribution

SN - 0735402574

SN - 9780735402577

VL - 772

SP - 83

EP - 84

BT - AIP Conference Proceedings

ER -