Electronic transport properties of strained Si thin films

Effective mass anomalies

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The effect of strain and layer thickness on the transport properties of < 100 >, < 111 >, and < 110 > confined Si thin films is systematically investigated using the density functional calculation. The strain is uniformly applied to the plane perpendicular to the confined direction and the lattice along the direction is relaxed. Anomalously heavy effective mass, which is more than ten times of the strain-free bulk value, is found in the case of the < 111 > confinement with relatively large strain. Similar results are obtained for the < 110 > case. These heavy masses are attributed to the bulk property, where the two electron pockets, whose center is located about 0.84 Γ-X in the non-strained case, merge into one pocket under the relatively large strain.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages1405-1406
Number of pages2
Volume893
DOIs
Publication statusPublished - 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period06/7/2406/7/28

Fingerprint

transport properties
anomalies
thin films
electronics
electrons

Keywords

  • Band structure
  • Density functional calculation
  • Effective mass
  • Electron pocket
  • SOI
  • Strained Si

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electronic transport properties of strained Si thin films : Effective mass anomalies. / Yamauchi, Jun.

AIP Conference Proceedings. Vol. 893 2007. p. 1405-1406.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamauchi, J 2007, Electronic transport properties of strained Si thin films: Effective mass anomalies. in AIP Conference Proceedings. vol. 893, pp. 1405-1406, 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 06/7/24. https://doi.org/10.1063/1.2730430
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