Electroresistance effect in gold thin film induced by ionic-liquid-gated electric double layer

Hiroyasu Nakayama, Jianting Ye, Takashi Ohtani, Yasunori Fujikawa, Kazuya Ando, Yoshihiro Iwasa, Eiji Saitoh

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with 27 (-25)MVcm -1 of electric field by applying only 1.7V of positive (negative) gate voltage. The experimental results indicate that the ionic-liquid-gated EDLT technique can be used for controlling the surface electronic states on metallic systems.

Original languageEnglish
Article number023002
JournalApplied Physics Express
Volume5
Issue number2
DOIs
Publication statusPublished - 2012 Feb
Externally publishedYes

Fingerprint

Ionic liquids
Transistors
Gold
gold
Thin films
Metallic films
Electronic states
transistors
liquids
thin films
Capacitors
Electric fields
Modulation
capacitors
Electric potential
modulation
electric fields
electric potential
electronics

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Electroresistance effect in gold thin film induced by ionic-liquid-gated electric double layer. / Nakayama, Hiroyasu; Ye, Jianting; Ohtani, Takashi; Fujikawa, Yasunori; Ando, Kazuya; Iwasa, Yoshihiro; Saitoh, Eiji.

In: Applied Physics Express, Vol. 5, No. 2, 023002, 02.2012.

Research output: Contribution to journalArticle

Nakayama, Hiroyasu ; Ye, Jianting ; Ohtani, Takashi ; Fujikawa, Yasunori ; Ando, Kazuya ; Iwasa, Yoshihiro ; Saitoh, Eiji. / Electroresistance effect in gold thin film induced by ionic-liquid-gated electric double layer. In: Applied Physics Express. 2012 ; Vol. 5, No. 2.
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