Electroresistance effect in gold thin film induced by ionic-liquid-gated electric double layer

Hiroyasu Nakayama, Jianting Ye, Takashi Ohtani, Yasunori Fujikawa, Kazuya Ando, Yoshihiro Iwasa, Eiji Saitoh

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with 27 (-25)MVcm -1 of electric field by applying only 1.7V of positive (negative) gate voltage. The experimental results indicate that the ionic-liquid-gated EDLT technique can be used for controlling the surface electronic states on metallic systems.

Original languageEnglish
Article number023002
JournalApplied Physics Express
Volume5
Issue number2
DOIs
Publication statusPublished - 2012 Feb 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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