Energy levels and degeneracy ratios for chromium in silicon

Takemitsu Kunio, Tomoki Nishino, Eiji Ohta, Makoto Sakata

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The energy levels and the degeneracy ratios for chromium in silicon have been determined by the Hall coefficients which were measured by the van der Pauw method. Using the curve fitting method for carrier concentration based on the charge balance equation with the root mean square deviation, the analysis shows that chromium in silicon gives rise to two donor levels. The energy levels of the upper and lower donors are located at Ec-0.226(±0.010)eV and Ev+0.128(±0.005)eV, and their degeneracy ratios are 1 3 and 1 4, respectivel.

Original languageEnglish
Pages (from-to)1087-1091
Number of pages5
JournalSolid State Electronics
Volume24
Issue number12
DOIs
Publication statusPublished - 1981

Fingerprint

Chromium
Silicon
Electron energy levels
chromium
energy levels
curve fitting
Curve fitting
silicon
Carrier concentration
Hall effect
deviation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Energy levels and degeneracy ratios for chromium in silicon. / Kunio, Takemitsu; Nishino, Tomoki; Ohta, Eiji; Sakata, Makoto.

In: Solid State Electronics, Vol. 24, No. 12, 1981, p. 1087-1091.

Research output: Contribution to journalArticle

Kunio, T, Nishino, T, Ohta, E & Sakata, M 1981, 'Energy levels and degeneracy ratios for chromium in silicon', Solid State Electronics, vol. 24, no. 12, pp. 1087-1091. https://doi.org/10.1016/0038-1101(81)90174-X
Kunio, Takemitsu ; Nishino, Tomoki ; Ohta, Eiji ; Sakata, Makoto. / Energy levels and degeneracy ratios for chromium in silicon. In: Solid State Electronics. 1981 ; Vol. 24, No. 12. pp. 1087-1091.
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