The energy levels and the degeneracy ratios for chromium in silicon have been determined by the Hall coefficients which were measured by the van der Pauw method. Using the curve fitting method for carrier concentration based on the charge balance equation with the root mean square deviation, the analysis shows that chromium in silicon gives rise to two donor levels. The energy levels of the upper and lower donors are located at Ec-0.226(±0.010)eV and Ev+0.128(±0.005)eV, and their degeneracy ratios are 1 3 and 1 4, respectivel.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry