Energy levels and degeneracy ratios for chromium in silicon

Takemitsu Kunio; Tomoki Nishino; Eiji Ohta; Makoto Sakata

doi:10.1016/0038-1101(81)90174-X

Energy levels and degeneracy ratios for chromium in silicon

Takemitsu Kunio, Tomoki Nishino, Eiji Ohta, Makoto Sakata

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The energy levels and the degeneracy ratios for chromium in silicon have been determined by the Hall coefficients which were measured by the van der Pauw method. Using the curve fitting method for carrier concentration based on the charge balance equation with the root mean square deviation, the analysis shows that chromium in silicon gives rise to two donor levels. The energy levels of the upper and lower donors are located at E_c-0.226(±0.010)eV and E_v+0.128(±0.005)eV, and their degeneracy ratios are 1 3 and 1 4, respectivel.

Original language	English
Pages (from-to)	1087-1091
Number of pages	5
Journal	Solid State Electronics
Volume	24
Issue number	12
DOIs	https://doi.org/10.1016/0038-1101(81)90174-X
Publication status	Published - 1981 Dec
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(81)90174-X

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title = "Energy levels and degeneracy ratios for chromium in silicon",

abstract = "The energy levels and the degeneracy ratios for chromium in silicon have been determined by the Hall coefficients which were measured by the van der Pauw method. Using the curve fitting method for carrier concentration based on the charge balance equation with the root mean square deviation, the analysis shows that chromium in silicon gives rise to two donor levels. The energy levels of the upper and lower donors are located at Ec-0.226(±0.010)eV and Ev+0.128(±0.005)eV, and their degeneracy ratios are 1 3 and 1 4, respectivel.",

author = "Takemitsu Kunio and Tomoki Nishino and Eiji Ohta and Makoto Sakata",

year = "1981",

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doi = "10.1016/0038-1101(81)90174-X",

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journal = "Solid-State Electronics",

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AU - Kunio, Takemitsu

AU - Nishino, Tomoki

AU - Ohta, Eiji

AU - Sakata, Makoto

PY - 1981/12

Y1 - 1981/12

N2 - The energy levels and the degeneracy ratios for chromium in silicon have been determined by the Hall coefficients which were measured by the van der Pauw method. Using the curve fitting method for carrier concentration based on the charge balance equation with the root mean square deviation, the analysis shows that chromium in silicon gives rise to two donor levels. The energy levels of the upper and lower donors are located at Ec-0.226(±0.010)eV and Ev+0.128(±0.005)eV, and their degeneracy ratios are 1 3 and 1 4, respectivel.

AB - The energy levels and the degeneracy ratios for chromium in silicon have been determined by the Hall coefficients which were measured by the van der Pauw method. Using the curve fitting method for carrier concentration based on the charge balance equation with the root mean square deviation, the analysis shows that chromium in silicon gives rise to two donor levels. The energy levels of the upper and lower donors are located at Ec-0.226(±0.010)eV and Ev+0.128(±0.005)eV, and their degeneracy ratios are 1 3 and 1 4, respectivel.

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JO - Solid-State Electronics

JF - Solid-State Electronics

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ER -

Energy levels and degeneracy ratios for chromium in silicon

Abstract

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