Energy levels and degeneracy ratios for magnesium in n-type silicon

Eiji Ohta, Makoto Sakata

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

The energy levels and degeneracy ratios of magnesium in n-type silicon have been determined by Hall effect measurements with the least square method. Magnesium ions appear to occupy two different sites and show different electrical properties. The first is amphoteric and exhibits an acceptor level at Ec - 0.115 eV (±0.002 eV), degeneracy ratio γI- = 2.5 as well as a donor level at Ec - 0.40 eV (±0.01 eV), γIII+ = 1. The second exhibits a donor level at Ec - 0.227 eV (±0.004 eV), degeneracy ratio γII+ = 1 2.5. The physical nature of these Mg associated site is unknown.

Original languageEnglish
Pages (from-to)677-682
Number of pages6
JournalSolid State Electronics
Volume22
Issue number7
DOIs
Publication statusPublished - 1979 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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