Energy levels and degeneracy ratios for magnesium in n-type silicon

Eiji Ohta, Makoto Sakata

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The energy levels and degeneracy ratios of magnesium in n-type silicon have been determined by Hall effect measurements with the least square method. Magnesium ions appear to occupy two different sites and show different electrical properties. The first is amphoteric and exhibits an acceptor level at Ec - 0.115 eV (±0.002 eV), degeneracy ratio γI- = 2.5 as well as a donor level at Ec - 0.40 eV (±0.01 eV), γIII+ = 1. The second exhibits a donor level at Ec - 0.227 eV (±0.004 eV), degeneracy ratio γII+ = 1 2.5. The physical nature of these Mg associated site is unknown.

Original languageEnglish
Pages (from-to)677-682
Number of pages6
JournalSolid State Electronics
Volume22
Issue number7
DOIs
Publication statusPublished - 1979

Fingerprint

Silicon
Magnesium
Electron energy levels
magnesium
energy levels
Hall effect
silicon
Electric properties
Ions
least squares method
electrical properties
ions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Energy levels and degeneracy ratios for magnesium in n-type silicon. / Ohta, Eiji; Sakata, Makoto.

In: Solid State Electronics, Vol. 22, No. 7, 1979, p. 677-682.

Research output: Contribution to journalArticle

Ohta, Eiji ; Sakata, Makoto. / Energy levels and degeneracy ratios for magnesium in n-type silicon. In: Solid State Electronics. 1979 ; Vol. 22, No. 7. pp. 677-682.
@article{cf31546a5459434abf8907698c240760,
title = "Energy levels and degeneracy ratios for magnesium in n-type silicon",
abstract = "The energy levels and degeneracy ratios of magnesium in n-type silicon have been determined by Hall effect measurements with the least square method. Magnesium ions appear to occupy two different sites and show different electrical properties. The first is amphoteric and exhibits an acceptor level at Ec - 0.115 eV (±0.002 eV), degeneracy ratio γI- = 2.5 as well as a donor level at Ec - 0.40 eV (±0.01 eV), γIII+ = 1. The second exhibits a donor level at Ec - 0.227 eV (±0.004 eV), degeneracy ratio γII+ = 1 2.5. The physical nature of these Mg associated site is unknown.",
author = "Eiji Ohta and Makoto Sakata",
year = "1979",
doi = "10.1016/0038-1101(79)90144-8",
language = "English",
volume = "22",
pages = "677--682",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "7",

}

TY - JOUR

T1 - Energy levels and degeneracy ratios for magnesium in n-type silicon

AU - Ohta, Eiji

AU - Sakata, Makoto

PY - 1979

Y1 - 1979

N2 - The energy levels and degeneracy ratios of magnesium in n-type silicon have been determined by Hall effect measurements with the least square method. Magnesium ions appear to occupy two different sites and show different electrical properties. The first is amphoteric and exhibits an acceptor level at Ec - 0.115 eV (±0.002 eV), degeneracy ratio γI- = 2.5 as well as a donor level at Ec - 0.40 eV (±0.01 eV), γIII+ = 1. The second exhibits a donor level at Ec - 0.227 eV (±0.004 eV), degeneracy ratio γII+ = 1 2.5. The physical nature of these Mg associated site is unknown.

AB - The energy levels and degeneracy ratios of magnesium in n-type silicon have been determined by Hall effect measurements with the least square method. Magnesium ions appear to occupy two different sites and show different electrical properties. The first is amphoteric and exhibits an acceptor level at Ec - 0.115 eV (±0.002 eV), degeneracy ratio γI- = 2.5 as well as a donor level at Ec - 0.40 eV (±0.01 eV), γIII+ = 1. The second exhibits a donor level at Ec - 0.227 eV (±0.004 eV), degeneracy ratio γII+ = 1 2.5. The physical nature of these Mg associated site is unknown.

UR - http://www.scopus.com/inward/record.url?scp=0018493985&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0018493985&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(79)90144-8

DO - 10.1016/0038-1101(79)90144-8

M3 - Article

AN - SCOPUS:0018493985

VL - 22

SP - 677

EP - 682

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 7

ER -