Energy levels and degeneracy ratios for magnesium in n-type silicon

Eiji Ohta; Makoto Sakata

doi:10.1016/0038-1101(79)90144-8

Energy levels and degeneracy ratios for magnesium in n-type silicon

Eiji Ohta, Makoto Sakata

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The energy levels and degeneracy ratios of magnesium in n-type silicon have been determined by Hall effect measurements with the least square method. Magnesium ions appear to occupy two different sites and show different electrical properties. The first is amphoteric and exhibits an acceptor level at E_c - 0.115 eV (±0.002 eV), degeneracy ratio γ_I^- = 2.5 as well as a donor level at E_c - 0.40 eV (±0.01 eV), γ_III⁺ = 1. The second exhibits a donor level at E_c - 0.227 eV (±0.004 eV), degeneracy ratio γ_II⁺ = 1 2.5. The physical nature of these Mg associated site is unknown.

Original language	English
Pages (from-to)	677-682
Number of pages	6
Journal	Solid State Electronics
Volume	22
Issue number	7
DOIs	https://doi.org/10.1016/0038-1101(79)90144-8
Publication status	Published - 1979 Jul
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(79)90144-8

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title = "Energy levels and degeneracy ratios for magnesium in n-type silicon",

abstract = "The energy levels and degeneracy ratios of magnesium in n-type silicon have been determined by Hall effect measurements with the least square method. Magnesium ions appear to occupy two different sites and show different electrical properties. The first is amphoteric and exhibits an acceptor level at Ec - 0.115 eV (±0.002 eV), degeneracy ratio γI- = 2.5 as well as a donor level at Ec - 0.40 eV (±0.01 eV), γIII+ = 1. The second exhibits a donor level at Ec - 0.227 eV (±0.004 eV), degeneracy ratio γII+ = 1 2.5. The physical nature of these Mg associated site is unknown.",

author = "Eiji Ohta and Makoto Sakata",

year = "1979",

month = jul,

doi = "10.1016/0038-1101(79)90144-8",

language = "English",

volume = "22",

pages = "677--682",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

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T1 - Energy levels and degeneracy ratios for magnesium in n-type silicon

AU - Ohta, Eiji

AU - Sakata, Makoto

PY - 1979/7

Y1 - 1979/7

N2 - The energy levels and degeneracy ratios of magnesium in n-type silicon have been determined by Hall effect measurements with the least square method. Magnesium ions appear to occupy two different sites and show different electrical properties. The first is amphoteric and exhibits an acceptor level at Ec - 0.115 eV (±0.002 eV), degeneracy ratio γI- = 2.5 as well as a donor level at Ec - 0.40 eV (±0.01 eV), γIII+ = 1. The second exhibits a donor level at Ec - 0.227 eV (±0.004 eV), degeneracy ratio γII+ = 1 2.5. The physical nature of these Mg associated site is unknown.

AB - The energy levels and degeneracy ratios of magnesium in n-type silicon have been determined by Hall effect measurements with the least square method. Magnesium ions appear to occupy two different sites and show different electrical properties. The first is amphoteric and exhibits an acceptor level at Ec - 0.115 eV (±0.002 eV), degeneracy ratio γI- = 2.5 as well as a donor level at Ec - 0.40 eV (±0.01 eV), γIII+ = 1. The second exhibits a donor level at Ec - 0.227 eV (±0.004 eV), degeneracy ratio γII+ = 1 2.5. The physical nature of these Mg associated site is unknown.

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JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 7

ER -

Energy levels and degeneracy ratios for magnesium in n-type silicon

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