Energy spectrum of the quantum-dot in a Si single-electron device

Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

A point contact metal oxide semiconductor field effect transistor (MOSFET) is used as a single quantum dot transistor fabricated on a silicon on insulator (SOI) substrate using the anisotropic etching technique. The energy spectrum of the quantum dot is extracted in Si single electron transistor from the gate voltage and drain voltage dependence of the drain current. The negative differential conductance (NDC) is observed in Si single electron transistor. Accurate understanding of the electronic states in the dot is important for the design of extremely small single electron devices for the room temperature operation.

Original languageEnglish
Pages84-85
Number of pages2
Publication statusPublished - 1997 Jan 1
Externally publishedYes
EventProceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA
Duration: 1997 Jun 231997 Jun 25

Other

OtherProceedings of the 1997 55th Annual Device Research Conference
CityFort Collins, CO, USA
Period97/6/2397/6/25

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Ishikuro, H., & Hiramoto, T. (1997). Energy spectrum of the quantum-dot in a Si single-electron device. 84-85. Paper presented at Proceedings of the 1997 55th Annual Device Research Conference, Fort Collins, CO, USA, .