Enhanced hole drift velocity in sub-0.1μm Si devices caused by anisotropic velocity overshoot

Yukio Tagawa; Yuji Awano

doi:10.1109/IWCE.1998.742748

Enhanced hole drift velocity in sub-0.1μm Si devices caused by anisotropic velocity overshoot

Yukio Tagawa, Yuji Awano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We performed for the first time full band Monte Carlo simulations of anisotropic hole transport in sub-0.1 μm Si devices. We found from this simulation of 0.05 μm channel p-i-p diodes that the hole drift velocity in the channel with the orientation of with respect to crystallographic direction is enhanced by the velocity overshoot effect, and that the average velocity in the middle of the channel is 25% higher than for a diode in direction at room temperature. These results suggest that the current drive capability of sub-0.1 μm pMOSFETs could be optimized by choosing the channel orientation in the direction.

Original language	English
Title of host publication	Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	206-209
Number of pages	4
ISBN (Electronic)	0780343697, 9780780343696
DOIs	https://doi.org/10.1109/IWCE.1998.742748
Publication status	Published - 1998
Externally published	Yes
Event	6th International Workshop on Computational Electronics, IWCE 1998 - Osaka, Japan Duration: 1998 Oct 19 → 1998 Oct 21

Publication series

Name	Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
Volume	1998-October

Other

Other	6th International Workshop on Computational Electronics, IWCE 1998
Country/Territory	Japan
City	Osaka
Period	98/10/19 → 98/10/21

ASJC Scopus subject areas

Modelling and Simulation
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Mathematical Physics

Access to Document

10.1109/IWCE.1998.742748

Cite this

Tagawa, Y., & Awano, Y. (1998). Enhanced hole drift velocity in sub-0.1μm Si devices caused by anisotropic velocity overshoot. In Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998 (pp. 206-209). [742748] (Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998; Vol. 1998-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWCE.1998.742748

Enhanced hole drift velocity in sub-0.1μm Si devices caused by anisotropic velocity overshoot. / Tagawa, Yukio; Awano, Yuji.
Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998. Institute of Electrical and Electronics Engineers Inc., 1998. p. 206-209 742748 (Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998; Vol. 1998-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tagawa, Y & Awano, Y 1998, Enhanced hole drift velocity in sub-0.1μm Si devices caused by anisotropic velocity overshoot. in Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998., 742748, Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998, vol. 1998-October, Institute of Electrical and Electronics Engineers Inc., pp. 206-209, 6th International Workshop on Computational Electronics, IWCE 1998, Osaka, Japan, 98/10/19. https://doi.org/10.1109/IWCE.1998.742748

Tagawa Y, Awano Y. Enhanced hole drift velocity in sub-0.1μm Si devices caused by anisotropic velocity overshoot. In Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998. Institute of Electrical and Electronics Engineers Inc. 1998. p. 206-209. 742748. (Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998). doi: 10.1109/IWCE.1998.742748

Tagawa, Yukio ; Awano, Yuji. / Enhanced hole drift velocity in sub-0.1μm Si devices caused by anisotropic velocity overshoot. Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998. Institute of Electrical and Electronics Engineers Inc., 1998. pp. 206-209 (Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998).

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abstract = "We performed for the first time full band Monte Carlo simulations of anisotropic hole transport in sub-0.1 μm Si devices. We found from this simulation of 0.05 μm channel p-i-p diodes that the hole drift velocity in the channel with the orientation of with respect to crystallographic direction is enhanced by the velocity overshoot effect, and that the average velocity in the middle of the channel is 25% higher than for a diode in direction at room temperature. These results suggest that the current drive capability of sub-0.1 μm pMOSFETs could be optimized by choosing the channel orientation in the direction.",

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AB - We performed for the first time full band Monte Carlo simulations of anisotropic hole transport in sub-0.1 μm Si devices. We found from this simulation of 0.05 μm channel p-i-p diodes that the hole drift velocity in the channel with the orientation of with respect to crystallographic direction is enhanced by the velocity overshoot effect, and that the average velocity in the middle of the channel is 25% higher than for a diode in direction at room temperature. These results suggest that the current drive capability of sub-0.1 μm pMOSFETs could be optimized by choosing the channel orientation in the direction.

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Enhanced hole drift velocity in sub-0.1μm Si devices caused by anisotropic velocity overshoot

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