Enhanced hole drift velocity in sub-0.1μm Si devices caused by anisotropic velocity overshoot

Yukio Tagawa, Yuji Awano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We performed for the first time full band Monte Carlo simulations of anisotropic hole transport in sub-0.1 μm Si devices. We found from this simulation of 0.05 μm channel p-i-p diodes that the hole drift velocity in the channel with the orientation of with respect to crystallographic direction is enhanced by the velocity overshoot effect, and that the average velocity in the middle of the channel is 25% higher than for a diode in direction at room temperature. These results suggest that the current drive capability of sub-0.1 μm pMOSFETs could be optimized by choosing the channel orientation in the direction.

Original languageEnglish
Title of host publicationExtended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages206-209
Number of pages4
Volume1998-October
ISBN (Electronic)0780343697, 9780780343696
DOIs
Publication statusPublished - 1998 Jan 1
Externally publishedYes
Event6th International Workshop on Computational Electronics, IWCE 1998 - Osaka, Japan
Duration: 1998 Oct 191998 Oct 21

Other

Other6th International Workshop on Computational Electronics, IWCE 1998
CountryJapan
CityOsaka
Period98/10/1998/10/21

ASJC Scopus subject areas

  • Modelling and Simulation
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Mathematical Physics

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  • Cite this

    Tagawa, Y., & Awano, Y. (1998). Enhanced hole drift velocity in sub-0.1μm Si devices caused by anisotropic velocity overshoot. In Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998 (Vol. 1998-October, pp. 206-209). [742748] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWCE.1998.742748