Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion

Masashi Uematsu, Hiroyuki Kageshima, Shigeto Fukatsu, Kohei M Itoh, Kenji Shiraishi, Minoru Otani, Atsushi Oshiyama

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We present experimental and simulation results of Si self-diffusion and B diffusion in SiO2 formed directly on Si substrates by thermal oxidation. We show that both Si and B diffusion in SiO2 are enhanced by SiO generated at the Si/SiO2 interface and diffusing into SiO2. We also show that the existence of high-concentration B in SiO2 enhances SiO diffusion, which enhances both Si self-diffusion and B diffusion. This correlated diffusion of Si and B in SiO2 is consistent with the first-principles calculation results, which show that B diffuses via a complex of BSiO with frequent bond exchanges in the SiO2 network. Furthermore, based on the results, the enhancement of Si self-diffusion and B diffusion in SiO2 by compressive strain and their retardation by tensile strain are suggested.

Original languageEnglish
Pages (from-to)270-275
Number of pages6
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - 2006 Jun 5

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grade
Semiconductor materials
Tensile strain
oxidation
augmentation
Oxidation
simulation
Substrates

Keywords

  • Boron
  • Diffusion
  • Silicon oxide
  • Stress

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Uematsu, M., Kageshima, H., Fukatsu, S., Itoh, K. M., Shiraishi, K., Otani, M., & Oshiyama, A. (2006). Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion. Thin Solid Films, 508(1-2), 270-275. https://doi.org/10.1016/j.tsf.2005.06.118

Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion. / Uematsu, Masashi; Kageshima, Hiroyuki; Fukatsu, Shigeto; Itoh, Kohei M; Shiraishi, Kenji; Otani, Minoru; Oshiyama, Atsushi.

In: Thin Solid Films, Vol. 508, No. 1-2, 05.06.2006, p. 270-275.

Research output: Contribution to journalArticle

Uematsu, M, Kageshima, H, Fukatsu, S, Itoh, KM, Shiraishi, K, Otani, M & Oshiyama, A 2006, 'Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion', Thin Solid Films, vol. 508, no. 1-2, pp. 270-275. https://doi.org/10.1016/j.tsf.2005.06.118
Uematsu, Masashi ; Kageshima, Hiroyuki ; Fukatsu, Shigeto ; Itoh, Kohei M ; Shiraishi, Kenji ; Otani, Minoru ; Oshiyama, Atsushi. / Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion. In: Thin Solid Films. 2006 ; Vol. 508, No. 1-2. pp. 270-275.
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AU - Shiraishi, Kenji

AU - Otani, Minoru

AU - Oshiyama, Atsushi

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