Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion

Masashi Uematsu, Hiroyuki Kageshima, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi, Minoru Otani, Atsushi Oshiyama

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We present experimental and simulation results of Si self-diffusion and B diffusion in SiO2 formed directly on Si substrates by thermal oxidation. We show that both Si and B diffusion in SiO2 are enhanced by SiO generated at the Si/SiO2 interface and diffusing into SiO2. We also show that the existence of high-concentration B in SiO2 enhances SiO diffusion, which enhances both Si self-diffusion and B diffusion. This correlated diffusion of Si and B in SiO2 is consistent with the first-principles calculation results, which show that B diffuses via a complex of BSiO with frequent bond exchanges in the SiO2 network. Furthermore, based on the results, the enhancement of Si self-diffusion and B diffusion in SiO2 by compressive strain and their retardation by tensile strain are suggested.

Original languageEnglish
Pages (from-to)270-275
Number of pages6
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - 2006 Jun 5

Keywords

  • Boron
  • Diffusion
  • Silicon oxide
  • Stress

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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