Enhanced spin hall effect in semiconductor heterostructures with artificial potential

Mikio Eto, Tomohiro Yokoyama

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We theoretically investigate the extrinsic spin Hall effect (SHE) in semiconductor heterostructures, caused by scattering at an artificial potential created by an antidot, STM tip, etc. The potential is electrically tunable. First, we formulate the SHE in terms of phase shifts in the partial wave expansion for a two-dimensional electron gas. The effect is significantly enhanced by resonant scattering when the attractive potential is properly tuned. Second, we examine a three-terminal device including an antidot, which possibly produces a spin current with a polarization of more than 50%.

Original languageEnglish
Article number073710
JournalJournal of the Physical Society of Japan
Volume78
Issue number7
DOIs
Publication statusPublished - 2009 Jul

Fingerprint

Hall effect
scattering
elastic waves
electron gas
phase shift
polarization

Keywords

  • Antidot
  • Resonant scattering
  • Spin filter
  • spin Hall effect
  • Spin-orbit interaction
  • STM

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Enhanced spin hall effect in semiconductor heterostructures with artificial potential. / Eto, Mikio; Yokoyama, Tomohiro.

In: Journal of the Physical Society of Japan, Vol. 78, No. 7, 073710, 07.2009.

Research output: Contribution to journalArticle

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