Enhanced thermoelectricity by controlled local structure in bismuth-chalcogenides

K. Terashima, Y. Yano, E. Paris, Y. Goto, Y. Mizuguchi, Y. Kamihara, T. Wakita, Y. Muraoka, N. L. Saini, T. Yokoya

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2 Citations (Scopus)

Abstract

Spectroscopic techniques, including photoelectron spectroscopy, diffuse reflectance, and x-ray absorption, are used to investigate the electronic structure and the local structure of LaOBiS 2 - xSe x thermoelectric material. It is found that Se substitution effectively suppresses local distortion that can be responsible for the increased carrier mobility together with a change in the electronic structure. The results suggest a possible way to control thermoelectric properties by tuning of the local crystal structure of these materials.

Original languageEnglish
Article number145105
JournalJournal of Applied Physics
Volume125
Issue number14
DOIs
Publication statusPublished - 2019 Apr 14

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Terashima, K., Yano, Y., Paris, E., Goto, Y., Mizuguchi, Y., Kamihara, Y., Wakita, T., Muraoka, Y., Saini, N. L., & Yokoya, T. (2019). Enhanced thermoelectricity by controlled local structure in bismuth-chalcogenides. Journal of Applied Physics, 125(14), [145105]. https://doi.org/10.1063/1.5087096