Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots

Gento Yamahata, Ken Uchida, Shunri Oda, Yoshishige Tsuchiya, Hiroshi Mizuta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We study single-electron tunneling characteristics of silicon serial triple quantum dots which consist of lithographically-defined double quantum dots interconnected with a naturally-formed and smaller quantum dot. By controlling the single-electron tunneling through the triple quantum dots electrostatically using multiple side gates, the charge stability diagrams are characterized experimentally and theoretically. Several charge quadruple points are observed where sequential tunneling throughout the triple quantum dots is enabled. In addition, enhancement of tunnel conductance is observed along the two-hold degeneracy boundaries across which two electrons exhibit quantum cellular automata (QCA) cotunneling processes.

Original languageEnglish
Title of host publicationESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages314-317
Number of pages4
ISBN (Print)9781424423644
DOIs
Publication statusPublished - 2008
Externally publishedYes
EventESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, Scotland, United Kingdom
Duration: 2008 Sep 152008 Sep 19

Other

OtherESSDERC 2008 - 38th European Solid-State Device Research Conference
CountryUnited Kingdom
CityEdinburgh, Scotland
Period08/9/1508/9/19

Fingerprint

Cellular automata
Semiconductor quantum dots
Tunnels
Silicon
Electron tunneling
Electrons

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Yamahata, G., Uchida, K., Oda, S., Tsuchiya, Y., & Mizuta, H. (2008). Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots. In ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference (pp. 314-317). [4681761] IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2008.4681761

Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots. / Yamahata, Gento; Uchida, Ken; Oda, Shunri; Tsuchiya, Yoshishige; Mizuta, Hiroshi.

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society, 2008. p. 314-317 4681761.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamahata, G, Uchida, K, Oda, S, Tsuchiya, Y & Mizuta, H 2008, Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots. in ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference., 4681761, IEEE Computer Society, pp. 314-317, ESSDERC 2008 - 38th European Solid-State Device Research Conference, Edinburgh, Scotland, United Kingdom, 08/9/15. https://doi.org/10.1109/ESSDERC.2008.4681761
Yamahata G, Uchida K, Oda S, Tsuchiya Y, Mizuta H. Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots. In ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society. 2008. p. 314-317. 4681761 https://doi.org/10.1109/ESSDERC.2008.4681761
Yamahata, Gento ; Uchida, Ken ; Oda, Shunri ; Tsuchiya, Yoshishige ; Mizuta, Hiroshi. / Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots. ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society, 2008. pp. 314-317
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