Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots

Gento Yamahata; Ken Uchida; Shunri Oda; Yoshishige Tsuchiya; Hiroshi Mizuta

doi:10.1109/ESSDERC.2008.4681761

Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots

Gento Yamahata, Ken Uchida, Shunri Oda, Yoshishige Tsuchiya, Hiroshi Mizuta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We study single-electron tunneling characteristics of silicon serial triple quantum dots which consist of lithographically-defined double quantum dots interconnected with a naturally-formed and smaller quantum dot. By controlling the single-electron tunneling through the triple quantum dots electrostatically using multiple side gates, the charge stability diagrams are characterized experimentally and theoretically. Several charge quadruple points are observed where sequential tunneling throughout the triple quantum dots is enabled. In addition, enhancement of tunnel conductance is observed along the two-hold degeneracy boundaries across which two electrons exhibit quantum cellular automata (QCA) cotunneling processes.

Original language	English
Title of host publication	ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
Publisher	IEEE Computer Society
Pages	314-317
Number of pages	4
ISBN (Print)	9781424423644
DOIs	https://doi.org/10.1109/ESSDERC.2008.4681761
Publication status	Published - 2008
Externally published	Yes
Event	ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, Scotland, United Kingdom Duration: 2008 Sept 15 → 2008 Sept 19

Publication series

Name	ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Other

Other	ESSDERC 2008 - 38th European Solid-State Device Research Conference
Country/Territory	United Kingdom
City	Edinburgh, Scotland
Period	08/9/15 → 08/9/19

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ESSDERC.2008.4681761

Cite this

Yamahata, G., Uchida, K., Oda, S., Tsuchiya, Y., & Mizuta, H. (2008). Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots. In ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference (pp. 314-317). [4681761] (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2008.4681761

Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots. / Yamahata, Gento; Uchida, Ken; Oda, Shunri et al.

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society, 2008. p. 314-317 4681761 (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamahata, G, Uchida, K, Oda, S, Tsuchiya, Y & Mizuta, H 2008, Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots. in ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference., 4681761, ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference, IEEE Computer Society, pp. 314-317, ESSDERC 2008 - 38th European Solid-State Device Research Conference, Edinburgh, Scotland, United Kingdom, 08/9/15. https://doi.org/10.1109/ESSDERC.2008.4681761

Yamahata G, Uchida K, Oda S, Tsuchiya Y, Mizuta H. Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots. In ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society. 2008. p. 314-317. 4681761. (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2008.4681761

Yamahata, Gento ; Uchida, Ken ; Oda, Shunri et al. / Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots. ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society, 2008. pp. 314-317 (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference).

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abstract = "We study single-electron tunneling characteristics of silicon serial triple quantum dots which consist of lithographically-defined double quantum dots interconnected with a naturally-formed and smaller quantum dot. By controlling the single-electron tunneling through the triple quantum dots electrostatically using multiple side gates, the charge stability diagrams are characterized experimentally and theoretically. Several charge quadruple points are observed where sequential tunneling throughout the triple quantum dots is enabled. In addition, enhancement of tunnel conductance is observed along the two-hold degeneracy boundaries across which two electrons exhibit quantum cellular automata (QCA) cotunneling processes.",

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AB - We study single-electron tunneling characteristics of silicon serial triple quantum dots which consist of lithographically-defined double quantum dots interconnected with a naturally-formed and smaller quantum dot. By controlling the single-electron tunneling through the triple quantum dots electrostatically using multiple side gates, the charge stability diagrams are characterized experimentally and theoretically. Several charge quadruple points are observed where sequential tunneling throughout the triple quantum dots is enabled. In addition, enhancement of tunnel conductance is observed along the two-hold degeneracy boundaries across which two electrons exhibit quantum cellular automata (QCA) cotunneling processes.

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Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots

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