Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots

Gento Yamahata, Ken Uchida, Shunri Oda, Yoshishige Tsuchiya, Hiroshi Mizuta

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    We study single-electron tunneling characteristics of silicon serial triple quantum dots which consist of lithographically-defined double quantum dots interconnected with a naturally-formed and smaller quantum dot. By controlling the single-electron tunneling through the triple quantum dots electrostatically using multiple side gates, the charge stability diagrams are characterized experimentally and theoretically. Several charge quadruple points are observed where sequential tunneling throughout the triple quantum dots is enabled. In addition, enhancement of tunnel conductance is observed along the two-hold degeneracy boundaries across which two electrons exhibit quantum cellular automata (QCA) cotunneling processes.

    Original languageEnglish
    Title of host publicationESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
    PublisherIEEE Computer Society
    Pages314-317
    Number of pages4
    ISBN (Print)9781424423644
    DOIs
    Publication statusPublished - 2008 Jan 1
    EventESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, Scotland, United Kingdom
    Duration: 2008 Sep 152008 Sep 19

    Publication series

    NameESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

    Other

    OtherESSDERC 2008 - 38th European Solid-State Device Research Conference
    CountryUnited Kingdom
    CityEdinburgh, Scotland
    Period08/9/1508/9/19

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering

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  • Cite this

    Yamahata, G., Uchida, K., Oda, S., Tsuchiya, Y., & Mizuta, H. (2008). Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots. In ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference (pp. 314-317). [4681761] (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2008.4681761