Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well

M. Myronov, Y. Shiraki, T. Mouri, Kohei M Itoh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Over three times enhancement of room-temperature two-dimensional hole gas (2DHG) conductivity, up to 649.3 μS, by implementation of double-sides modulation doping with strained Ge quantum well (QW) of the same thickness was obtained. The improvement was achieved by successful increase of the 2DHG density due to modification of valence band profile of Ge QW. The obtained 2DHG conductivity exceeds the previously reported high mobility two-dimensional electron gas and 2DHG conductivities.

Original languageEnglish
Pages (from-to)359-361
Number of pages3
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - 2008 Nov 3

Fingerprint

Semiconductor quantum wells
Modulation
quantum wells
modulation
conductivity
Two dimensional electron gas
augmentation
room temperature
Valence bands
modulation doping
Gases
Doping (additives)
Temperature
electron gas
valence
profiles
gases

Keywords

  • 2DHG
  • Ge quantum well
  • MBE
  • Mobility

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well. / Myronov, M.; Shiraki, Y.; Mouri, T.; Itoh, Kohei M.

In: Thin Solid Films, Vol. 517, No. 1, 03.11.2008, p. 359-361.

Research output: Contribution to journalArticle

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