Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well

M. Myronov; Y. Shiraki; T. Mouri; K. M. Itoh

doi:10.1016/j.tsf.2008.08.061

Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well

M. Myronov, Y. Shiraki, T. Mouri, K. M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Over three times enhancement of room-temperature two-dimensional hole gas (2DHG) conductivity, up to 649.3 μS, by implementation of double-sides modulation doping with strained Ge quantum well (QW) of the same thickness was obtained. The improvement was achieved by successful increase of the 2DHG density due to modification of valence band profile of Ge QW. The obtained 2DHG conductivity exceeds the previously reported high mobility two-dimensional electron gas and 2DHG conductivities.

Original language	English
Pages (from-to)	359-361
Number of pages	3
Journal	Thin Solid Films
Volume	517
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2008.08.061
Publication status	Published - 2008 Nov 3

Keywords

2DHG
Ge quantum well
MBE
Mobility

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2008.08.061

Cite this

@article{a23e3a01581841cb83524b6752115fe8,

title = "Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well",

abstract = "Over three times enhancement of room-temperature two-dimensional hole gas (2DHG) conductivity, up to 649.3 μS, by implementation of double-sides modulation doping with strained Ge quantum well (QW) of the same thickness was obtained. The improvement was achieved by successful increase of the 2DHG density due to modification of valence band profile of Ge QW. The obtained 2DHG conductivity exceeds the previously reported high mobility two-dimensional electron gas and 2DHG conductivities.",

keywords = "2DHG, Ge quantum well, MBE, Mobility",

author = "M. Myronov and Y. Shiraki and T. Mouri and Itoh, {K. M.}",

note = "Funding Information: This work was supported by “High-Tech Research Center” Project for Private Universities: matching fund subsidy from MEXT, 2002–2007 and JSPS funding for young researchers 18760019.",

year = "2008",

month = nov,

day = "3",

doi = "10.1016/j.tsf.2008.08.061",

language = "English",

volume = "517",

pages = "359--361",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well

AU - Myronov, M.

AU - Shiraki, Y.

AU - Mouri, T.

AU - Itoh, K. M.

N1 - Funding Information: This work was supported by “High-Tech Research Center” Project for Private Universities: matching fund subsidy from MEXT, 2002–2007 and JSPS funding for young researchers 18760019.

PY - 2008/11/3

Y1 - 2008/11/3

N2 - Over three times enhancement of room-temperature two-dimensional hole gas (2DHG) conductivity, up to 649.3 μS, by implementation of double-sides modulation doping with strained Ge quantum well (QW) of the same thickness was obtained. The improvement was achieved by successful increase of the 2DHG density due to modification of valence band profile of Ge QW. The obtained 2DHG conductivity exceeds the previously reported high mobility two-dimensional electron gas and 2DHG conductivities.

AB - Over three times enhancement of room-temperature two-dimensional hole gas (2DHG) conductivity, up to 649.3 μS, by implementation of double-sides modulation doping with strained Ge quantum well (QW) of the same thickness was obtained. The improvement was achieved by successful increase of the 2DHG density due to modification of valence band profile of Ge QW. The obtained 2DHG conductivity exceeds the previously reported high mobility two-dimensional electron gas and 2DHG conductivities.

KW - 2DHG

KW - Ge quantum well

KW - MBE

KW - Mobility

UR - http://www.scopus.com/inward/record.url?scp=54849417957&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54849417957&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2008.08.061

DO - 10.1016/j.tsf.2008.08.061

M3 - Article

AN - SCOPUS:54849417957

SN - 0040-6090

VL - 517

SP - 359

EP - 361

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this