Enhancement of room-temperature hole conductivity in narrow and strained Ge quantum well by double-side modulation doping

M. Myronov, Y. Shiraki, T. Mouri, K. M. Itoh

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The room-temperature two-dimensional hole gas (2DHG) conductivity as high as 649.3 μS is obtained by implementation of double-side modulation doping (DS-MOD) of an 8 nm thick strained Ge quantum well in a SiGe heterostructure. This conductivity is about three times higher than that of the conventional SiGe heterostructure with single-side modulation doping (SS-MOD). While the low-temperature (T=3 K) mobility with DS-MOD is two times higher than that with SS-MOD, the room-temperature mobility of the two is practically the same, suggesting that phonon scattering is the dominant limiting mechanism at the device operating temperatures.

Original languageEnglish
Article number192108
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 2007 May 17


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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