Enhancement of room-temperature hole conductivity in narrow and strained Ge quantum well by double-side modulation doping

M. Myronov, Y. Shiraki, T. Mouri, Kohei M Itoh

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The room-temperature two-dimensional hole gas (2DHG) conductivity as high as 649.3 μS is obtained by implementation of double-side modulation doping (DS-MOD) of an 8 nm thick strained Ge quantum well in a SiGe heterostructure. This conductivity is about three times higher than that of the conventional SiGe heterostructure with single-side modulation doping (SS-MOD). While the low-temperature (T=3 K) mobility with DS-MOD is two times higher than that with SS-MOD, the room-temperature mobility of the two is practically the same, suggesting that phonon scattering is the dominant limiting mechanism at the device operating temperatures.

Original languageEnglish
Article number192108
JournalApplied Physics Letters
Volume90
Issue number19
DOIs
Publication statusPublished - 2007

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modulation doping
quantum wells
conductivity
augmentation
room temperature
operating temperature
scattering
gases

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Enhancement of room-temperature hole conductivity in narrow and strained Ge quantum well by double-side modulation doping. / Myronov, M.; Shiraki, Y.; Mouri, T.; Itoh, Kohei M.

In: Applied Physics Letters, Vol. 90, No. 19, 192108, 2007.

Research output: Contribution to journalArticle

@article{83270a11ef2f48fd8570a5f80232172c,
title = "Enhancement of room-temperature hole conductivity in narrow and strained Ge quantum well by double-side modulation doping",
abstract = "The room-temperature two-dimensional hole gas (2DHG) conductivity as high as 649.3 μS is obtained by implementation of double-side modulation doping (DS-MOD) of an 8 nm thick strained Ge quantum well in a SiGe heterostructure. This conductivity is about three times higher than that of the conventional SiGe heterostructure with single-side modulation doping (SS-MOD). While the low-temperature (T=3 K) mobility with DS-MOD is two times higher than that with SS-MOD, the room-temperature mobility of the two is practically the same, suggesting that phonon scattering is the dominant limiting mechanism at the device operating temperatures.",
author = "M. Myronov and Y. Shiraki and T. Mouri and Itoh, {Kohei M}",
year = "2007",
doi = "10.1063/1.2737396",
language = "English",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Enhancement of room-temperature hole conductivity in narrow and strained Ge quantum well by double-side modulation doping

AU - Myronov, M.

AU - Shiraki, Y.

AU - Mouri, T.

AU - Itoh, Kohei M

PY - 2007

Y1 - 2007

N2 - The room-temperature two-dimensional hole gas (2DHG) conductivity as high as 649.3 μS is obtained by implementation of double-side modulation doping (DS-MOD) of an 8 nm thick strained Ge quantum well in a SiGe heterostructure. This conductivity is about three times higher than that of the conventional SiGe heterostructure with single-side modulation doping (SS-MOD). While the low-temperature (T=3 K) mobility with DS-MOD is two times higher than that with SS-MOD, the room-temperature mobility of the two is practically the same, suggesting that phonon scattering is the dominant limiting mechanism at the device operating temperatures.

AB - The room-temperature two-dimensional hole gas (2DHG) conductivity as high as 649.3 μS is obtained by implementation of double-side modulation doping (DS-MOD) of an 8 nm thick strained Ge quantum well in a SiGe heterostructure. This conductivity is about three times higher than that of the conventional SiGe heterostructure with single-side modulation doping (SS-MOD). While the low-temperature (T=3 K) mobility with DS-MOD is two times higher than that with SS-MOD, the room-temperature mobility of the two is practically the same, suggesting that phonon scattering is the dominant limiting mechanism at the device operating temperatures.

UR - http://www.scopus.com/inward/record.url?scp=34248334637&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248334637&partnerID=8YFLogxK

U2 - 10.1063/1.2737396

DO - 10.1063/1.2737396

M3 - Article

AN - SCOPUS:34248334637

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

M1 - 192108

ER -