Enhancement of sensor response in graphene gas sensors by gate-induced field

Takahisa Tanaka, Takamune Yokoyama, Ken Uchida

Research output: Contribution to journalArticle

Abstract

The effects of the gate-induced field on sensor response in functionalized graphene sensor have not been fully understood yet. In this letter, graphene sensors decorated with Pd nanoparticles were fabricated, and gate voltage dependences of drain current and sensor response to hydrogen were experimentally and numerically examined. The sensor response was enhanced in the gate-induced electron conduction regime, compared to that in hole conduction regime. By utilizing the non-equilibrium Green's function calculations, the origin of the response enhancement was modeled as asymmetric potentials for holes and electrons. We conclude that the sensor response of graphene can be enhanced using the gate-induced electric field in various types of graphene sensors.

Original languageEnglish
Article number8491313
Pages (from-to)1924-1927
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number12
DOIs
Publication statusPublished - 2018 Dec 1

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Graphite
Chemical sensors
Graphene
Sensors
Electrons
Drain current
Green's function
Hydrogen
Electric fields
Nanoparticles
Electric potential

Keywords

  • Gas sensors
  • gate-induced field
  • graphene
  • palladium
  • surface functionalization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Enhancement of sensor response in graphene gas sensors by gate-induced field. / Tanaka, Takahisa; Yokoyama, Takamune; Uchida, Ken.

In: IEEE Electron Device Letters, Vol. 39, No. 12, 8491313, 01.12.2018, p. 1924-1927.

Research output: Contribution to journalArticle

Tanaka, Takahisa ; Yokoyama, Takamune ; Uchida, Ken. / Enhancement of sensor response in graphene gas sensors by gate-induced field. In: IEEE Electron Device Letters. 2018 ; Vol. 39, No. 12. pp. 1924-1927.
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