Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex

Yoshikazu Mizuguchi, Atsushi Omachi, Yosuke Goto, Yoichi Kamihara, Masanori Matoba, Takafumi Hiroi, Joe Kajitani, Osuke Miura

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

We have investigated the thermoelectric properties of the novel layered bismuth chalcogenides LaOBiS2- xSex. The partial substitution of S by Se produced the enhancement of electrical conductivity (metallic characteristics) in LaOBiS2- xSex. The power factor largely increased with increasing Se concentration. The highest power factor was 4.5 μW/cmK2 at around 470 °C for LaOBiS1.2Se0.8. The obtained dimensionless figure-of-merit (ZT) was 0.17 at around 470 °C in LaOBiS1.2Se0.8.

Original languageEnglish
Article number163915
JournalJournal of Applied Physics
Volume116
Issue number16
DOIs
Publication statusPublished - 2014

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bismuth
substitutes
augmentation
chalcogenides
figure of merit
electrical resistivity

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex . / Mizuguchi, Yoshikazu; Omachi, Atsushi; Goto, Yosuke; Kamihara, Yoichi; Matoba, Masanori; Hiroi, Takafumi; Kajitani, Joe; Miura, Osuke.

In: Journal of Applied Physics, Vol. 116, No. 16, 163915, 2014.

Research output: Contribution to journalArticle

Mizuguchi, Yoshikazu ; Omachi, Atsushi ; Goto, Yosuke ; Kamihara, Yoichi ; Matoba, Masanori ; Hiroi, Takafumi ; Kajitani, Joe ; Miura, Osuke. / Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex In: Journal of Applied Physics. 2014 ; Vol. 116, No. 16.
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