Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex

Yoshikazu Mizuguchi; Atsushi Omachi; Yosuke Goto; Yoichi Kamihara; Masanori Matoba; Takafumi Hiroi; Joe Kajitani; Osuke Miura

doi:10.1063/1.4900953

Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS_2-xSe_x

Yoshikazu Mizuguchi, Atsushi Omachi, Yosuke Goto, Yoichi Kamihara, Masanori Matoba, Takafumi Hiroi, Joe Kajitani, Osuke Miura

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article

31 Citations (Scopus)

Abstract

We have investigated the thermoelectric properties of the novel layered bismuth chalcogenides LaOBiS_2-_xSe_x. The partial substitution of S by Se produced the enhancement of electrical conductivity (metallic characteristics) in LaOBiS_2-_xSe_x. The power factor largely increased with increasing Se concentration. The highest power factor was 4.5 μW/cmK² at around 470 °C for LaOBiS_1.2Se_0.8. The obtained dimensionless figure-of-merit (ZT) was 0.17 at around 470 °C in LaOBiS_1.2Se_0.8.

Original language	English
Article number	163915
Journal	Journal of Applied Physics
Volume	116
Issue number	16
DOIs	https://doi.org/10.1063/1.4900953
Publication status	Published - 2014 Jan 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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Mizuguchi, Y., Omachi, A., Goto, Y., Kamihara, Y., Matoba, M., Hiroi, T., Kajitani, J., & Miura, O. (2014). Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS_2-xSe_x. Journal of Applied Physics, 116(16), [163915]. https://doi.org/10.1063/1.4900953

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