Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex

Yoshikazu Mizuguchi; Atsushi Omachi; Yosuke Goto; Yoichi Kamihara; Masanori Matoba; Takafumi Hiroi; Joe Kajitani; Osuke Miura

doi:10.1063/1.4900953

Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS_2-xSe_x

Yoshikazu Mizuguchi, Atsushi Omachi, Yosuke Goto, Yoichi Kamihara, Masanori Matoba, Takafumi Hiroi, Joe Kajitani, Osuke Miura

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

We have investigated the thermoelectric properties of the novel layered bismuth chalcogenides LaOBiS_2-_xSe_x. The partial substitution of S by Se produced the enhancement of electrical conductivity (metallic characteristics) in LaOBiS_2-_xSe_x. The power factor largely increased with increasing Se concentration. The highest power factor was 4.5 μW/cmK² at around 470 °C for LaOBiS_1.2Se_0.8. The obtained dimensionless figure-of-merit (ZT) was 0.17 at around 470 °C in LaOBiS_1.2Se_0.8.

Original language	English
Article number	163915
Journal	Journal of Applied Physics
Volume	116
Issue number	16
DOIs	https://doi.org/10.1063/1.4900953
Publication status	Published - 2014 Oct 28

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.4900953

Fingerprint Dive into the research topics of 'Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS<sub>2-x</sub>Se<sub>x</sub>'. Together they form a unique fingerprint.

Cite this

Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS_2-xSe_x. / Mizuguchi, Yoshikazu; Omachi, Atsushi; Goto, Yosuke; Kamihara, Yoichi ; Matoba, Masanori; Hiroi, Takafumi; Kajitani, Joe; Miura, Osuke.

In: Journal of Applied Physics, Vol. 116, No. 16, 163915, 28.10.2014.

Research output: Contribution to journal › Article › peer-review

@article{2f32b8d518184077b25a9fc55e3fe5b4,

title = "Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex",

abstract = "We have investigated the thermoelectric properties of the novel layered bismuth chalcogenides LaOBiS2-xSex. The partial substitution of S by Se produced the enhancement of electrical conductivity (metallic characteristics) in LaOBiS2-xSex. The power factor largely increased with increasing Se concentration. The highest power factor was 4.5 μW/cmK2 at around 470 °C for LaOBiS1.2Se0.8. The obtained dimensionless figure-of-merit (ZT) was 0.17 at around 470 °C in LaOBiS1.2Se0.8.",

author = "Yoshikazu Mizuguchi and Atsushi Omachi and Yosuke Goto and Yoichi Kamihara and Masanori Matoba and Takafumi Hiroi and Joe Kajitani and Osuke Miura",

note = "Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

year = "2014",

month = oct,

day = "28",

doi = "10.1063/1.4900953",

language = "English",

volume = "116",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "16",

}

TY - JOUR

T1 - Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex

AU - Mizuguchi, Yoshikazu

AU - Omachi, Atsushi

AU - Goto, Yosuke

AU - Kamihara, Yoichi

AU - Matoba, Masanori

AU - Hiroi, Takafumi

AU - Kajitani, Joe

AU - Miura, Osuke

PY - 2014/10/28

Y1 - 2014/10/28

N2 - We have investigated the thermoelectric properties of the novel layered bismuth chalcogenides LaOBiS2-xSex. The partial substitution of S by Se produced the enhancement of electrical conductivity (metallic characteristics) in LaOBiS2-xSex. The power factor largely increased with increasing Se concentration. The highest power factor was 4.5 μW/cmK2 at around 470 °C for LaOBiS1.2Se0.8. The obtained dimensionless figure-of-merit (ZT) was 0.17 at around 470 °C in LaOBiS1.2Se0.8.

AB - We have investigated the thermoelectric properties of the novel layered bismuth chalcogenides LaOBiS2-xSex. The partial substitution of S by Se produced the enhancement of electrical conductivity (metallic characteristics) in LaOBiS2-xSex. The power factor largely increased with increasing Se concentration. The highest power factor was 4.5 μW/cmK2 at around 470 °C for LaOBiS1.2Se0.8. The obtained dimensionless figure-of-merit (ZT) was 0.17 at around 470 °C in LaOBiS1.2Se0.8.

UR - http://www.scopus.com/inward/record.url?scp=84908541876&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908541876&partnerID=8YFLogxK

U2 - 10.1063/1.4900953

DO - 10.1063/1.4900953

M3 - Article

AN - SCOPUS:84908541876

VL - 116

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 16

M1 - 163915