Abstract
We have investigated the thermoelectric properties of the novel layered bismuth chalcogenides LaOBiS2-xSex. The partial substitution of S by Se produced the enhancement of electrical conductivity (metallic characteristics) in LaOBiS2-xSex. The power factor largely increased with increasing Se concentration. The highest power factor was 4.5 μW/cmK2 at around 470 °C for LaOBiS1.2Se0.8. The obtained dimensionless figure-of-merit (ZT) was 0.17 at around 470 °C in LaOBiS1.2Se0.8.
Original language | English |
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Article number | 163915 |
Journal | Journal of Applied Physics |
Volume | 116 |
Issue number | 16 |
DOIs | |
Publication status | Published - 2014 Oct 28 |
ASJC Scopus subject areas
- Physics and Astronomy(all)