Enhancement of valence band mixing in individual InAs/GaAs quantum dots by rapid thermal annealing

Edmund Harbord, Yasutomo Ota, Yuichi Igarashi, Masayuki Shirane, Naoto Kumagai, Shunsuke Ohkouchi, Satoshi Iwamoto, Shinichi Yorozu, Yasuhiko Arakawa

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We measure polarization resolved photoluminescence from excitonic complexes in tens of single InAs/GaAs quantum dots (QDs) over a wide range of energies in two samples: one as-grown, the other subjected to rapid thermal annealing (RTA). Using the linear polarization of the X+ emission as a probe of the valence band mixing (VBM), we find that RTA enhances QD VBM, attributed to the increase in QD height. We complement our measurements with 8-band k · p calculations, which suggest the increase in height on annealing is responsible for this enhancement.

Original languageEnglish
Article number125001
JournalJapanese journal of applied physics
Volume52
Issue number12
DOIs
Publication statusPublished - 2013 Dec
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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